P-channel MOSFET in PG-TDSON-8 package, rated for -100 V drain-source voltage, with a maximum on-resistance of 75 mΩ at VGS=4.5 V and a continuous drain current of 32 A. The device is avalanche-tested, logic-level gated, and compliant with RoHS and IEC61249-2-21 standards. Fully qualified for industrial applications according to JEDEC.
P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications
OptiMOS™ P-channel MOSFETs 100 V in SuperSO8 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISC750P10LM |
| Product Name | Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISC750P10LM |
| Polarity | P-Channel; P |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0750 ohms |