Infineon Technologies AG Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISC750P10LM ISC750P10LM

Description
P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 100 V in SuperSO8 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. Summary of Features Available in 6 different packages Wide RDS(on) range Normal level and logic level availability Optimized for a wide range of applications Broad availability from distribution partners Benefits Industry standard package Ideal for high and low switching frequency Avalanche ruggedness Easy interface to MCU Improved efficiency at low loads due to low Qf Reduced design complexity Energy efficiency Potential Applications Battery management Industrial automation Industrial drives
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Description
P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 100 V in SuperSO8 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. Summary of Features Available in 6 different packages Wide RDS(on) range Normal level and logic level availability Optimized for a wide range of applications Broad availability from distribution partners Benefits Industry standard package Ideal for high and low switching frequency Avalanche ruggedness Easy interface to MCU Improved efficiency at low loads due to low Qf Reduced design complexity Energy efficiency Potential Applications Battery management Industrial automation Industrial drives
Request a Quote
Datasheet
Datasheet Summary
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P-channel MOSFET in PG-TDSON-8 package, rated for -100 V drain-source voltage, with a maximum on-resistance of 75 mΩ at VGS=4.5 V and a continuous drain current of 32 A. The device is avalanche-tested, logic-level gated, and compliant with RoHS and IEC61249-2-21 standards. Fully qualified for industrial applications according to JEDEC.

Datasheet Summary
Powered by GS/AI

P-channel MOSFET in PG-TDSON-8 package, rated for -100 V drain-source voltage, with a maximum on-resistance of 75 mΩ at VGS=4.5 V and a continuous drain current of 32 A. The device is avalanche-tested, logic-level gated, and compliant with RoHS and IEC61249-2-21 standards. Fully qualified for industrial applications according to JEDEC.

Suppliers

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Supplier Links
Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISC750P10LM - ISC750P10LM - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISC750P10LM
ISC750P10LM
Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISC750P10LM ISC750P10LM
P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 100 V in SuperSO8 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. Summary of Features Available in 6 different packages Wide RDS(on) range Normal level and logic level availability Optimized for a wide range of applications Broad availability from distribution partners Benefits Industry standard package Ideal for high and low switching frequency Avalanche ruggedness Easy interface to MCU Improved efficiency at low loads due to low Qf Reduced design complexity Energy efficiency Potential Applications Battery management Industrial automation Industrial drives

P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications

OptiMOS™ P-channel MOSFETs 100 V in SuperSO8 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.


Summary of Features

  • Available in 6 different packages
  • Wide RDS(on) range
  • Normal level and logic level availability
  • Optimized for a wide range of applications
  • Broad availability from distribution partners

Benefits

  • Industry standard package
  • Ideal for high and low switching frequency
  • Avalanche ruggedness
  • Easy interface to MCU
  • Improved efficiency at low loads due to low Qf
  • Reduced design complexity
  • Energy efficiency

Potential Applications

  • Battery management
  • Industrial automation
  • Industrial drives
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number ISC750P10LM
Product Name Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISC750P10LM
Polarity P-Channel; P
Transistor Technology / Material Si/SiC
rDS(on) 0.0750 ohms
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