The ISP75DP06LM is a P-channel MOSFET in SOT-223 package for switching applications up to -60 V. It has a maximum continuous drain current of -1.1 A and a drain-source on-resistance of 750 mΩ at -4.5 V gate voltage. The device is avalanche-rated with single-pulse energy of 36 mJ at -1.1 A and features logic-level gate drive. It is fully qualified for industrial applications per JEDEC, meets RoHS and halogen-free IEC 61249-2-21 requirements, and operates from -55 °C to 150 °C junction temperature.
P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications
OptiMOS™ P-channel 60V power MOSFETs in SOT-223 package is the new technology targeted for consumer applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The product improve efficiency at low loads due to low Qg.and is available in logic level featuring a wide RDS(on) range.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Power MOSFET | Transistors |
| Product Number | ISP75DP06LM | ISP75DP06LM |
| Product Name | Small Signal/Small Power MOSFET | Transistors |
| Polarity | P-Channel; P | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.7500 ohms |
