Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSF2N7422U JANSF2N7422U

Description
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSF2N7422U - JANSF2N7422U - Infineon Technologies AG
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Description
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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JANSF2N7422U is a radiation-hardened, P-channel power MOSFET in an SMD-1 ceramic package, rated for -100V drain-to-source voltage and -22A continuous drain current. It has a maximum on-resistance of 80 mΩ at -12V gate bias and a total gate charge of 200 nC. The device is hermetically sealed, supports a junction temperature range of -55°C to +150°C, and is qualified to JANS screening flow per MIL-PRF-19500 for space applications. It is rated for 300 krad(Si) total ionizing dose and has been characterized for single event effects. ESD rating is Class 2 per MIL-STD-750, Method 1020.

Datasheet Summary
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JANSF2N7422U is a radiation-hardened, P-channel power MOSFET in an SMD-1 ceramic package, rated for -100V drain-to-source voltage and -22A continuous drain current. It has a maximum on-resistance of 80 mΩ at -12V gate bias and a total gate charge of 200 nC. The device is hermetically sealed, supports a junction temperature range of -55°C to +150°C, and is qualified to JANS screening flow per MIL-PRF-19500 for space applications. It is rated for 300 krad(Si) total ionizing dose and has been characterized for single event effects. ESD rating is Class 2 per MIL-STD-750, Method 1020.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSF2N7422U - JANSF2N7422U - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSF2N7422U
JANSF2N7422U
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSF2N7422U JANSF2N7422U
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL

Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si) TID, QPL

Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Low total gate charge
  • Proton tolerant
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Surface mount
  • Light weight
  • ESD Rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

  • Isolated DC-DC converters
  • Motor drives
  • Electric propulsion
  • Thermal management

Slash sheet


Similar Parts

IRHN9150

SMD-1, 100 krad(Si) TID, COTS

IRHN9150D

SMD-1, 100 krad(Si) TID, COTS, On DBC carrier

JANTXVR2N7422U

SMD-1, 100 krad(Si) TID, QPL

JANSR2N7422U

SMD-1, 100 krad(Si) TID, QPL

IRHN93150

SMD-1, 300 krad(Si) TID, COTS

JANSF2N7422U

SMD-1, 300 krad(Si) TID, QPL

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Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number JANSF2N7422U
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSF2N7422U
Polarity P-Channel; P
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