IRHM9150 is a radiation-hardened, P-channel power MOSFET for space applications, housed in a TO-254AA thru-hole package weighing 9.3 g. It has a drain-to-source breakdown voltage of -100 V, continuous drain current of -22 A at 25°C, and a maximum on-state resistance of 80 mΩ at -12 V gate drive. The device features a total gate charge of 200 nC, is hermetically sealed with ceramic eyelets, and retains performance after exposure to 100 krad(Si) total ionizing dose. It is hardened against single event effects and meets MIL-PRF-19500/662 and JANS screening requirements, with an ESD rating of Class 2 per MIL-STD-750, Method 1020.
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, COTS
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Potential Applications
Slash sheet
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRHM9150 |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHM9150 |
| Polarity | P-Channel; P |
