ISK036N03LM5 is an N-channel MOSFET designed for high-performance and power-dense applications. It is packaged in a PG-VSON-6 (2x2 mm) surface-mount format with a maximum drain-source voltage of 30 V and a maximum on-resistance of 3.6 mΩ. The device supports a continuous drain current of 81 A and a pulsed drain current of 323 A, and is rated for 7 mJ single-pulse avalanche energy. It features low gate charge (7.2 nC from 0 V to 4.5 V), and thermal resistance from junction to case of 1.6-3.2 °C/W. The MOSFET is RoHS compliant, halogen-free per IEC61249-2-21, and fully qualified for industrial applications according to JEDEC standards.
OptiMOS™ 5 power MOSFET 30 V, 3.6 mΩ, smallest form factor in PQFN 2x2 package
With the new BIC OptiMOS™ 5 in 25V and 30V product family Infineon offers a Best in class solution for efficiency in a small form factor, making it the perfect solution for applications such as wireless charging, load switches and low power DCDC applications.
The small 4 mm2 footprint PQFN 2x2 package, combined with outstanding electrical performance contributes towards form factor improvement in end applications, featuring low RDS(on) of 3.6 mΩ.
Summary of Features
Benefits
Potential Applications
Applications
MOSFET SINGLE, 44A, 30V, 11W, VSON ROHS COMPLIANT: YES
| Infineon Technologies AG | RS Components, Ltd. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ISK036N03LM5 | 2406379 | 29AK0360 |
| Product Name | N-Channel Power MOSFET | MOSFETs | Mosfet Single, 44A, 30V, 11W, Vson Rohs Compliant Infineon |
| Polarity | N-Channel; N | ||
| Transistor Technology / Material | Si/SiC | ||
| rDS(on) | 0.0036 ohms |
