P-channel MOSFET with a -100 V drain-source breakdown voltage, designed for industrial applications requiring avalanche ruggedness and logic level operation. Packaged in PG-TSDSON-8 FL, measuring 3.20 mm to 3.40 mm in length and width, with a height of 0.90 mm to 1.10 mm. Features a maximum on-resistance of 245 mΩ at VGS = -4.5 V and a continuous drain current of -10.3 A. Fully qualified according to JEDEC for industrial applications, RoHS compliant, and halogen-free per IEC 61249-2-21.
P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications
OptiMOS™ P-channel MOSFETs 100 V in PQFN 3.3x3.3 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISZ24DP10LM |
| Product Name | Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISZ24DP10LM |
| Polarity | P-Channel; P |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.2450 ohms |
