Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - Quad rad hard power MOSFETs - IRHQ6110SCS IRHQ6110SCS

IRHQ6110 is a 100V, radiation-hardened, hermetically sealed, surface-mount power MOSFET in a 28-pin LCC package, designed for space applications. It features a combination of N- and P-channel devices with RDS(on) values of 0.6Ω and 1.1Ω respectively, continuous drain currents of 3.0A and -2.3A, and a total dose radiation tolerance of 100 kRads(Si). The device has a junction temperature range of -55°C to +150°C, a peak pulsed drain current of 12A for the N-channel and -9.2A for the P-channel, and a junction-to-case thermal resistance of 10.4 °C/W. It is qualified under MIL-STD-750, Method 1019, for total dose irradiation and is symmetrically designed for bridge configurations in DC-DC converters and motor control.