Infineon Technologies AG Small Signal/Small Power MOSFET ISP25DP06NM

Description
P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel 60V power MOSFETs in SOT-223 package is the new technology targeted for consumer applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The product improve efficiency at low loads due to low Qg.and is available in logic level featuring a wide RDS(on) range. Summary of Features VDS = -60V Wide RDS(on) range Logic level availability Benefits Easy interface to MCU Improved efficiency at low loads due to low Qg Fast switching Avalanche ruggedness Potential Applications Battery Consumer Industrial automation Industrial
Request a Quote Datasheet
Description
P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel 60V power MOSFETs in SOT-223 package is the new technology targeted for consumer applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The product improve efficiency at low loads due to low Qg.and is available in logic level featuring a wide RDS(on) range. Summary of Features VDS = -60V Wide RDS(on) range Logic level availability Benefits Easy interface to MCU Improved efficiency at low loads due to low Qg Fast switching Avalanche ruggedness Potential Applications Battery Consumer Industrial automation Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Small Signal/Small Power MOSFET - ISP25DP06NM - Infineon Technologies AG
Neubiberg, Germany
Small Signal/Small Power MOSFET
ISP25DP06NM
Small Signal/Small Power MOSFET ISP25DP06NM
P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel 60V power MOSFETs in SOT-223 package is the new technology targeted for consumer applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The product improve efficiency at low loads due to low Qg.and is available in logic level featuring a wide RDS(on) range. Summary of Features VDS = -60V Wide RDS(on) range Logic level availability Benefits Easy interface to MCU Improved efficiency at low loads due to low Qg Fast switching Avalanche ruggedness Potential Applications Battery Consumer Industrial automation Industrial

P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications

OptiMOS™ P-channel 60V power MOSFETs in SOT-223 package is the new technology targeted for consumer applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The product improve efficiency at low loads due to low Qg.and is available in logic level featuring a wide RDS(on) range.


Summary of Features

  • VDS = -60V
  • Wide RDS(on) range
  • Logic level availability

Benefits

  • Easy interface to MCU
  • Improved efficiency at low loads due to low Qg
  • Fast switching
  • Avalanche ruggedness

Potential Applications

  • Battery
  • Consumer
  • Industrial automation
  • Industrial
Supplier's Site Datasheet
Transistors - ISP25DP06NM - ODG (Origin Data Global)
Shenzhen, China
Transistors
ISP25DP06NM
Transistors ISP25DP06NM
SOT-223-4 MOSFETs ROHS

SOT-223-4 MOSFETs ROHS

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
ISP25DP06NM
Triode/MOS Tube/Transistor >> MOSFETs ISP25DP06NM
SOT-223-4 MOSFETs ROHS

SOT-223-4 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number ISP25DP06NM ISP25DP06NM ISP25DP06NM
Product Name Small Signal/Small Power MOSFET Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel; P
Transistor Technology / Material Si/SiC
rDS(on) 0.2500 ohms
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