P-channel MOSFET with -60 V drain-source voltage, maximum on-resistance of 250 mΩ, and continuous drain current of -1.9 A at 25°C, packaged in SOT-223-4. The device is avalanche rugged, fully qualified for industrial applications per JEDEC, and RoHS compliant with halogen-free lead plating according to IEC61249-2-21. Maximum power dissipation is 1.28 W with a thermal resistance of 70°C/W on a 40 mm × 40 mm FR4 PCB with 6 cm² copper area. Operating junction temperature ranges from -55°C to 150°C.
P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications
OptiMOS™ P-channel 60V power MOSFETs in SOT-223 package is the new technology targeted for consumer applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The product improve efficiency at low loads due to low Qg.and is available in logic level featuring a wide RDS(on) range.
Summary of Features
Benefits
Potential Applications
SOT-223-4 MOSFETs ROHS
| Infineon Technologies AG | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | |
|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | ISP25DP06NM | ISP25DP06NM | ISP25DP06NM |
| Product Name | Small Signal/Small Power MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Transistors |
| Polarity | P-Channel; P | ||
| Transistor Technology / Material | Si/SiC | ||
| rDS(on) | 0.2500 ohms |
