Infineon Technologies AG Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISS55EP06LM ISS55EP06LM

Description
P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range. Summary of Features VDS = -60V Wide RDS(on) range Normal Level and Logic Level availability Benefits Easy interface to MCU Improved efficiency at low loads due to low Qg Fast switching Avalanche ruggedness Potential Applications Battery Consumer Industrial automation Industrial drives Applications Connected and smart lighting for IoT
  • Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISS55EP06LM - ISS55EP06LM - Infineon Technologies AG
    Infineon Technologies AG
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Description
P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range. Summary of Features VDS = -60V Wide RDS(on) range Normal Level and Logic Level availability Benefits Easy interface to MCU Improved efficiency at low loads due to low Qg Fast switching Avalanche ruggedness Potential Applications Battery Consumer Industrial automation Industrial drives Applications Connected and smart lighting for IoT
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Datasheet
Datasheet Summary
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P-channel MOSFET in SOT-23 package rated for -60 V drain-source voltage, with a maximum on-resistance of 5.5 Ω at V_GS = -4.5 V and a continuous drain current of -0.18 A. Fully qualified for industrial applications according to JEDEC, with 100% avalanche testing and RoHS-compliant, halogen-free lead plating.

Datasheet Summary
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P-channel MOSFET in SOT-23 package rated for -60 V drain-source voltage, with a maximum on-resistance of 5.5 Ω at V_GS = -4.5 V and a continuous drain current of -0.18 A. Fully qualified for industrial applications according to JEDEC, with 100% avalanche testing and RoHS-compliant, halogen-free lead plating.

Suppliers

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Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISS55EP06LM - ISS55EP06LM - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISS55EP06LM
ISS55EP06LM
Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISS55EP06LM ISS55EP06LM
P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range. Summary of Features VDS = -60V Wide RDS(on) range Normal Level and Logic Level availability Benefits Easy interface to MCU Improved efficiency at low loads due to low Qg Fast switching Avalanche ruggedness Potential Applications Battery Consumer Industrial automation Industrial drives Applications Connected and smart lighting for IoT

P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications

OptiMOS™ P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range.


Summary of Features

  • VDS = -60V
  • Wide RDS(on) range
  • Normal Level and Logic Level availability

Benefits

  • Easy interface to MCU
  • Improved efficiency at low loads due to low Qg
  • Fast switching
  • Avalanche ruggedness

Potential Applications

  • Battery
  • Consumer
  • Industrial automation
  • Industrial drives

Applications

  • Connected and smart lighting for IoT
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number ISS55EP06LM
Product Name Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISS55EP06LM
Polarity P-Channel; P
Transistor Technology / Material Si/SiC
rDS(on) 5.5 ohms
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