Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - Quad rad hard power MOSFETs - IRHQ567110 IRHQ567110

IRHQ567110 is a radiation-hardened, hermetically sealed, surface-mount power MOSFET in an LCC-28 package, designed for space applications. It contains two N-channel and two P-channel devices with a 100 V drain-source breakdown voltage. The N-channel devices have a maximum RDS(on) of 0.27 Ω and a continuous drain current of 4.6 A at 25°C, while the P-channel devices have a maximum RDS(on) of 0.96 Ω and a continuous drain current of -2.8 A. The device is rated for a total ionizing dose of 100 kRads(Si), with single event effect hardness verified. It meets MIL-STD-750, Method 1020 for ESD classification 1A and is packaged in a ceramic case with a weight of 0.89 g. Thermal resistance from junction to case is 11.8 °C/W.