Manufacturer: Infineon Technologies
Win Source Part Number: 812336-IRLSL3036PBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Part Status: Obsolete (End Of Life)
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 380W (Tc)
Popularity: Low
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2.4mOhm at 165A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 140nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 11210pF at 50V
Current - Continuous Drain (Id) at 25°C: 195A (Tc)
Vgs(th) (Maximum) at Id: 2.5V at 250μA
Maximum Vgs: ±16V
MOSFET N-CH 60V 195A TO262 Product overview: IRLSL3036PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLSL3036PBF can be used for catalog matching and distributor lookup.
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MOSFET N-CH 60V 195A TO262
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 812336-IRLSL3036PBF | 278-IRLSL3036PBF | IRLSL3036PBF-ND | 376-IRLSL3036PBF | IRLSL3036PBF | IRLSL3036PBF |
| Product Name | FETs - Single - IRLSL3036PBF | 60V 195A MOSFET Transistor | Single FETs, MOSFETs | MOSFET N-CH 60V 195A TO262 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||||
| QG | 140 nC | |||||
| PD | 380000 milliwatts | 380000 milliwatts | 380000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | SOT3 | Tube | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA |
