IRHYS9A97230CM is a radiation-hardened P-channel power MOSFET for space applications, housed in a low-ohmic TO-257AA package with a weight of 4.3 g. It features a drain-source breakdown voltage of -200 V, a continuous drain current of -14 A at 25°C, and a maximum on-resistance of 175 mΩ. The device has a total gate charge of 49 nC and is qualified to MIL-PRF-19500 with a total ionizing dose tolerance of 100 krad(Si). It is hermetically sealed, electrically isolated, and meets ESD Class 2 per MIL-STD-750, Method 1020. The part is hardened against single event effects up to 90.5 MeV·cm²/mg and supports avalanche energy up to 770 mJ.
Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic package, 100 krad(Si) TID, COTS
Features
Potential Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRHYS9A97230CM |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHYS9A97230CM |
| Polarity | P-Channel; P |