Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHYS9A97230CM IRHYS9A97230CM

Description
Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic package, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Improved SOA for linear mode operation Low RDS(on) Improved avalanche energy Simple drive requirements Hermetically sealed Electrically isolated Ceramic eyelets ESD rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Motor drives DC-DC converter Latching current limiter Similar Parts IRHYS9A97230CM TO-257AA Low Ohmic package, 100 krad(Si) TID, COTS IRHYS9A93230CM TO-257AA Low Ohmic package, 300 krad(Si) TID, COTS IRHYB9A97230CM Tabless TO-257AA package, 100 krad(Si) TID, COTS IRHYB9A93230CM Tabless TO-257AA package, 300 krad(Si) TID, COTS
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Description
Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic package, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Improved SOA for linear mode operation Low RDS(on) Improved avalanche energy Simple drive requirements Hermetically sealed Electrically isolated Ceramic eyelets ESD rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Motor drives DC-DC converter Latching current limiter Similar Parts IRHYS9A97230CM TO-257AA Low Ohmic package, 100 krad(Si) TID, COTS IRHYS9A93230CM TO-257AA Low Ohmic package, 300 krad(Si) TID, COTS IRHYB9A97230CM Tabless TO-257AA package, 100 krad(Si) TID, COTS IRHYB9A93230CM Tabless TO-257AA package, 300 krad(Si) TID, COTS
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Datasheet
Datasheet Summary
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IRHYS9A97230CM is a radiation-hardened P-channel power MOSFET for space applications, housed in a low-ohmic TO-257AA package with a weight of 4.3 g. It features a drain-source breakdown voltage of -200 V, a continuous drain current of -14 A at 25°C, and a maximum on-resistance of 175 mΩ. The device has a total gate charge of 49 nC and is qualified to MIL-PRF-19500 with a total ionizing dose tolerance of 100 krad(Si). It is hermetically sealed, electrically isolated, and meets ESD Class 2 per MIL-STD-750, Method 1020. The part is hardened against single event effects up to 90.5 MeV·cm²/mg and supports avalanche energy up to 770 mJ.

Datasheet Summary
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IRHYS9A97230CM is a radiation-hardened P-channel power MOSFET for space applications, housed in a low-ohmic TO-257AA package with a weight of 4.3 g. It features a drain-source breakdown voltage of -200 V, a continuous drain current of -14 A at 25°C, and a maximum on-resistance of 175 mΩ. The device has a total gate charge of 49 nC and is qualified to MIL-PRF-19500 with a total ionizing dose tolerance of 100 krad(Si). It is hermetically sealed, electrically isolated, and meets ESD Class 2 per MIL-STD-750, Method 1020. The part is hardened against single event effects up to 90.5 MeV·cm²/mg and supports avalanche energy up to 770 mJ.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHYS9A97230CM - IRHYS9A97230CM - Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHYS9A97230CM
IRHYS9A97230CM
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHYS9A97230CM IRHYS9A97230CM
Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic package, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Improved SOA for linear mode operation Low RDS(on) Improved avalanche energy Simple drive requirements Hermetically sealed Electrically isolated Ceramic eyelets ESD rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Motor drives DC-DC converter Latching current limiter Similar Parts IRHYS9A97230CM TO-257AA Low Ohmic package, 100 krad(Si) TID, COTS IRHYS9A93230CM TO-257AA Low Ohmic package, 300 krad(Si) TID, COTS IRHYB9A97230CM Tabless TO-257AA package, 100 krad(Si) TID, COTS IRHYB9A93230CM Tabless TO-257AA package, 300 krad(Si) TID, COTS

Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic package, 100 krad(Si) TID, COTS

Features

  • Single event effect (SEE) hardened
  • Improved SOA for linear mode operation
  • Low RDS(on)
  • Improved avalanche energy
  • Simple drive requirements
  • Hermetically sealed
  • Electrically isolated
  • Ceramic eyelets
  • ESD rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

  • Motor drives
  • DC-DC converter
  • Latching current limiter

Similar Parts

IRHYS9A97230CM

TO-257AA Low Ohmic package, 100 krad(Si) TID, COTS

IRHYS9A93230CM

TO-257AA Low Ohmic package, 300 krad(Si) TID, COTS

IRHYB9A97230CM

Tabless TO-257AA package, 100 krad(Si) TID, COTS

IRHYB9A93230CM

Tabless TO-257AA package, 300 krad(Si) TID, COTS

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRHYS9A97230CM
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHYS9A97230CM
Polarity P-Channel; P
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