Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7626UBCN JANSR2N7626UBCN

Description
Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast switching Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight Complementary P-Channel Available - IRHLUB7970Z4, IRHLUBN7970Z4 IRHLUBC7970Z4, IRHLUBCN7970Z4 Also available with metal lid (IRHLUB7) Potential Applications Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails Synchronous rectification Active ORing circuits Power distribution circuits Load switch Slash sheet Similar Parts IRHLUBC7970Z4 UBC, 100 krad(Si) TID, COTS JANSR2N7626UBC UBC, 100 krad(Si) TID, QPL JANSF2N7626UBC UBC, 300 krad(Si) TID, QPL JANSR2N7626UBCN UBCN, 100 krad(Si) TID, QPL JANSF2N7626UBCN UBCN, 300 krad(Si) TID, QPL
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Description
Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast switching Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight Complementary P-Channel Available - IRHLUB7970Z4, IRHLUBN7970Z4 IRHLUBC7970Z4, IRHLUBCN7970Z4 Also available with metal lid (IRHLUB7) Potential Applications Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails Synchronous rectification Active ORing circuits Power distribution circuits Load switch Slash sheet Similar Parts IRHLUBC7970Z4 UBC, 100 krad(Si) TID, COTS JANSR2N7626UBC UBC, 100 krad(Si) TID, QPL JANSF2N7626UBC UBC, 300 krad(Si) TID, QPL JANSR2N7626UBCN UBCN, 100 krad(Si) TID, QPL JANSF2N7626UBCN UBCN, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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JANSR2N7626UBCN is a radiation-hardened, P-channel MOSFET in a UBCN surface-mount package, rated for -60V drain-to-source voltage and -0.53A continuous drain current, with a maximum on-state resistance of 1.40 Ω at -4.5V gate-source voltage and -0.33A drain current. It has a maximum total gate charge of 3.6 nC, supports 5V CMOS and TTL logic levels, and is hardened against single event effects. The device is hermetically sealed, operates with up to 100 krad(Si) total ionizing dose tolerance, and meets MIL-PRF-19500 qualification standards for space applications.

Datasheet Summary
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JANSR2N7626UBCN is a radiation-hardened, P-channel MOSFET in a UBCN surface-mount package, rated for -60V drain-to-source voltage and -0.53A continuous drain current, with a maximum on-state resistance of 1.40 Ω at -4.5V gate-source voltage and -0.33A drain current. It has a maximum total gate charge of 3.6 nC, supports 5V CMOS and TTL logic levels, and is hardened against single event effects. The device is hermetically sealed, operates with up to 100 krad(Si) total ionizing dose tolerance, and meets MIL-PRF-19500 qualification standards for space applications.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7626UBCN - JANSR2N7626UBCN - Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7626UBCN
JANSR2N7626UBCN
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7626UBCN JANSR2N7626UBCN
Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast switching Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight Complementary P-Channel Available - IRHLUB7970Z4, IRHLUBN7970Z4 IRHLUBC7970Z4, IRHLUBCN7970Z4 Also available with metal lid (IRHLUB7) Potential Applications Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails Synchronous rectification Active ORing circuits Power distribution circuits Load switch Slash sheet Similar Parts IRHLUBC7970Z4 UBC, 100 krad(Si) TID, COTS JANSR2N7626UBC UBC, 100 krad(Si) TID, QPL JANSF2N7626UBC UBC, 300 krad(Si) TID, QPL JANSR2N7626UBCN UBCN, 100 krad(Si) TID, QPL JANSF2N7626UBCN UBCN, 300 krad(Si) TID, QPL

Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si) TID, QPL

Features

  • Single event effect (SEE) hardened
  • 5V CMOS and TTL compatible
  • Fast switching
  • Low total gate charge
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Surface mount
  • Light weight
  • Complementary P-Channel Available - IRHLUB7970Z4, IRHLUBN7970Z4 IRHLUBC7970Z4, IRHLUBCN7970Z4
  • Also available with metal lid (IRHLUB7)

Potential Applications

  • Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails
  • Synchronous rectification
  • Active ORing circuits
  • Power distribution circuits
  • Load switch

Slash sheet


Similar Parts

IRHLUBC7970Z4

UBC, 100 krad(Si) TID, COTS

JANSR2N7626UBC

UBC, 100 krad(Si) TID, QPL

JANSF2N7626UBC

UBC, 300 krad(Si) TID, QPL

JANSR2N7626UBCN

UBCN, 100 krad(Si) TID, QPL

JANSF2N7626UBCN

UBCN, 300 krad(Si) TID, QPL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number JANSR2N7626UBCN
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7626UBCN
Polarity P-Channel; P
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