JANSR2N7626UBCN is a radiation-hardened, P-channel MOSFET in a UBCN surface-mount package, rated for -60V drain-to-source voltage and -0.53A continuous drain current, with a maximum on-state resistance of 1.40 Ω at -4.5V gate-source voltage and -0.33A drain current. It has a maximum total gate charge of 3.6 nC, supports 5V CMOS and TTL logic levels, and is hardened against single event effects. The device is hermetically sealed, operates with up to 100 krad(Si) total ionizing dose tolerance, and meets MIL-PRF-19500 qualification standards for space applications.
Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si) TID, QPL
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Potential Applications
Slash sheet
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANSR2N7626UBCN |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7626UBCN |
| Polarity | P-Channel; P |