P-channel MOSFET for low-power switching applications, housed in an SOT-223 package with a maximum drain-source voltage of -60 V, continuous drain current of -3.7 A at 25°C, and on-state resistance of 65 mΩ maximum at -10 V gate-source voltage. The device is avalanche-rated with 1961 mJ single-pulse energy, RoHS compliant, halogen-free per IEC 61249-2-21, and fully qualified per JEDEC for industrial applications.
P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications
OptiMOS™ P-channel 60V power MOSFETs in SOT-223 package is the new technology targeted for consumer applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The product improve efficiency at low loads due to low Qg.and is available in logic level featuring a wide RDS(on) range.
Summary of Features
Benefits
Potential Applications
60V 3.7A 54mΩ@10V,3.7A 4.2W 3V@1.037mA 1 Piece P-Channel SOT-223-4 MOSFETs ROHS
| Infineon Technologies AG | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Power MOSFET | Transistors |
| Product Number | ISP650P06NM | ISP650P06NM |
| Product Name | Small Signal/Small Power MOSFET | Transistors |
| Polarity | P-Channel; P | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.0650 ohms |
