JANSR2N7616UBC is a radiation-hardened, N-channel power MOSFET in a UBC package with a shielded ceramic lid connected to the fourth pad, designed for space applications. It operates at 60V drain-to-source voltage with a continuous drain current of 0.8A at 25°C and a maximum on-state resistance of 0.68Ω. The device has a total gate charge of 3.6nC and is compatible with 5V CMOS and TTL logic. It is hermetically sealed, weighs 43mg, and is qualified to MIL-PRF-19500 with a 100 krad(Si) total ionizing dose (TID) rating. Single event effects are mitigated, and it meets ESD Class 0B per MIL-STD-750, Method 1020. The operating junction temperature ranges from -55°C to +150°C.
Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBC, 100 krad(Si) TID, QPL
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Potential Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANSR2N7616UBC |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSR2N7616UBC |
| Polarity | N-Channel; N |