Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7422U JANSR2N7422U

Description
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7422U - JANSR2N7422U - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - JANSR2N7422U - 1016656-JANSR2N7422U - Win Source Electronics
    Win Source Electronics
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Description
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL
Request a Quote
Datasheet
Datasheet Summary
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JANSR2N7422U is a radiation-hardened, P-channel power MOSFET in an SMD-1 ceramic package, designed for space applications requiring high reliability. It has a drain-to-source breakdown voltage of -100V, continuous drain current of -22A at 25°C, and a maximum on-state resistance of 80mΩ at -12V gate bias. The device features a total gate charge of 200nC and is qualified to JANS screening per MIL-PRF-19500 with a total ionizing dose rating of 100 krad(Si). It is hermetically sealed, surface-mount, and meets ESD Class 2 per MIL-STD-750, Method 1020. The part is hardened against single event effects and proton exposure.

Datasheet Summary
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JANSR2N7422U is a radiation-hardened, P-channel power MOSFET in an SMD-1 ceramic package, designed for space applications requiring high reliability. It has a drain-to-source breakdown voltage of -100V, continuous drain current of -22A at 25°C, and a maximum on-state resistance of 80mΩ at -12V gate bias. The device features a total gate charge of 200nC and is qualified to JANS screening per MIL-PRF-19500 with a total ionizing dose rating of 100 krad(Si). It is hermetically sealed, surface-mount, and meets ESD Class 2 per MIL-STD-750, Method 1020. The part is hardened against single event effects and proton exposure.

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Supplier Links
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7422U - JANSR2N7422U - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7422U
JANSR2N7422U
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7422U JANSR2N7422U
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL

Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL

Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Low total gate charge
  • Proton tolerant
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Surface mount
  • Light weight
  • ESD Rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

  • Isolated DC-DC converters
  • Motor drives
  • Electric propulsion
  • Thermal management

Slash sheet


Similar Parts

IRHN9150

SMD-1, 100 krad(Si) TID, COTS

IRHN9150D

SMD-1, 100 krad(Si) TID, COTS, On DBC carrier

JANTXVR2N7422U

SMD-1, 100 krad(Si) TID, QPL

JANSR2N7422U

SMD-1, 100 krad(Si) TID, QPL

IRHN93150

SMD-1, 300 krad(Si) TID, COTS

JANSF2N7422U

SMD-1, 300 krad(Si) TID, QPL

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - JANSR2N7422U - 1016656-JANSR2N7422U - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - JANSR2N7422U
1016656-JANSR2N7422U
TRANSISTORS - Transistors - FETs, MOSFETs - RF - JANSR2N7422U 1016656-JANSR2N7422U
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1016656-JANSR2N7422U Termination: SMD/SMT Mounting: SMD (SMT) Number of Elements: 1 Power Dissipation: 150 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 125 °C Mount: Surface Mount RoHS: Non-Compliant Radiation Hardening: Yes Min Operating Temperature: -55 °C Continuous Drain Current (ID): -14 A Drain to Source Breakdown Voltage: -100 V Gate to Source Voltage (Vgs): 20 V

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1016656-JANSR2N7422U
Termination: SMD/SMT
Mounting: SMD (SMT)
Number of Elements: 1
Power Dissipation: 150 W
Number of Pins: 3
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 125 °C
Mount: Surface Mount
RoHS: Non-Compliant
Radiation Hardening: Yes
Min Operating Temperature: -55 °C
Continuous Drain Current (ID): -14 A
Drain to Source Breakdown Voltage: -100 V
Gate to Source Voltage (Vgs): 20 V

Buy Now
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
P-Channel SMD -100V MOSFET Transistor
285-JANSR2N7422U
P-Channel SMD -100V MOSFET Transistor 285-JANSR2N7422U
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package Product overview: JANSR2N7422U from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -100V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-JANSR2N7422U can be used for catalog matching and distributor lookup.

-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package Product overview: JANSR2N7422U from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -100V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-JANSR2N7422U can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number JANSR2N7422U 1016656-JANSR2N7422U 285-JANSR2N7422U
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7422U TRANSISTORS - Transistors - FETs, MOSFETs - RF - JANSR2N7422U P-Channel SMD -100V MOSFET Transistor
Polarity P-Channel; P
V(BR)DSS -100 volts -100 volts
QG 200 nC
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