JANSF2N7649T3 is a radiation-hardened, N-channel MOSFET in a Low-Ohmic TO-257AA package, designed for space applications with a 250V drain-to-source breakdown voltage, 17A continuous drain current, and a maximum on-state resistance of 110mΩ. It is qualified to MIL-PRF-19500, supports up to 300 krad(Si) total ionizing dose, and features hermetic sealing, an electrically isolated case, ceramic eyelets, and an ESD rating of Class 2 per MIL-STD-750, Method 1020. The device exhibits single event effect hardness up to 88.6 MeV·cm²/mg, fast switching, and low gate charge of 34nC.
Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, QPL
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANSF2N7649T3 |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7649T3 |
| Polarity | N-Channel; N |