The IRLHS6376 is a 30 V N-channel power MOSFET in a 2 mm × 2 mm dual PQFN package, designed for high-frequency switching applications with low conduction losses. It exhibits a maximum on-resistance of 63 mΩ at VGS = 4.5 V and 82 mΩ at VGS = 2.5 V, with a continuous drain current rating of 3.4 A at TC = 25 °C. The device supports a pulsed drain current up to 30 A and has a maximum junction temperature of 150 °C. Thermal resistance from junction to case (bottom) is rated at 19 °C/W, and junction-to-ambient thermal resistance is 86 °C/W. It is RoHS compliant and meets MSL1 moisture sensitivity level per JEDEC J-STD-020D. The part is qualified to industrial reliability standards per JEDEC JESD47F.
30V Dual N-Channel StrongIRFET™ Power MOSFET in a PQFN 2x2 package
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRLHS6376 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N+N |
