The JANTXV2N6845 is a hermetically sealed, P-channel HEXFET® power MOSFET rated for -100V drain-to-source voltage and -4.0A continuous drain current at 25°C, packaged in a TO-205AF (TO-39) case. It features repetitive avalanche and dv/dt ratings, with a maximum on-resistance of 0.60Ω at -10V gate-source voltage and -2.6A drain current, and a single pulse avalanche energy rating of 364 mJ. The device operates from -55°C to 150°C, with a junction-to-case thermal resistance of 6.25°C/W. It meets MIL-PRF-19500/563 standards and has an ESD rating of Class 1B per MIL-STD-750 Method 1020.
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6845 with Hermetic Packaging
Benefits
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JANTXV2N6845 A JANTXV2N6845 with Hermetic Packaging
Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1033027-JANTXV2N6845
Packaging: Bulk
Power Dissipation: 20 W
Number of Pins: 3
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): IRFBE30PBF; IRF620PBF; IRF830PBF; IRFU220NPBF; IPP90R1K2C3XKSA1; SPP04N60C3XKSA1;
Popularity: Low
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Through Hole
RoHS: Non-Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Continuous Drain Current (ID): -2.6 A
Drain to Source Breakdown Voltage: -100 V
Gate to Source Voltage (Vgs): 20 V
On-State Resistance: 600 mΩ
| Infineon Technologies AG | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | JANTXV2N6845 | 1033027-JANTXV2N6845 |
| Product Name | High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - JANTXV2N6845 | TRANSISTORS - Transistors - FETs, MOSFETs - RF - JANTXV2N6845 |
| Polarity | P-Channel; P | |
| Package Type | M-TO205-3 | SOT3 |
| Packing Method | Tray; TRAY | Bulk; Bulk |
| V(BR)DSS | -100 volts |
