Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHNA597064D IRHNA597064D

Description
Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Ease of paralleling Hermetically sealed Electrically isolated Ceramic Package Light weight Surface Mount ESD rating: Class 3A per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash sheet Similar Parts IRHNA597064 SMD-2, 100 krad(Si) TID, COTS IRHNA597064D SMD-2, 100 krad(Si) TID, COTS, On DBC carrier IRHNA597064SCS SMD-2, 100 krad(Si) TID, QIRL JANSR2N7524U2S SMD-2, 100 krad(Si) TID, QPL JANSR2N7524U2 SMD-2, 100 krad(Si) TID, QPL IRHNA593064 SMD-2, 300 krad(Si) TID, COTS JANSF2N7524U2 SMD-2, 300 krad(Si) TID, QPL
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Description
Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Ease of paralleling Hermetically sealed Electrically isolated Ceramic Package Light weight Surface Mount ESD rating: Class 3A per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash sheet Similar Parts IRHNA597064 SMD-2, 100 krad(Si) TID, COTS IRHNA597064D SMD-2, 100 krad(Si) TID, COTS, On DBC carrier IRHNA597064SCS SMD-2, 100 krad(Si) TID, QIRL JANSR2N7524U2S SMD-2, 100 krad(Si) TID, QPL JANSR2N7524U2 SMD-2, 100 krad(Si) TID, QPL IRHNA593064 SMD-2, 300 krad(Si) TID, COTS JANSF2N7524U2 SMD-2, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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The IRHNA597064D is a radiation-hardened, P-channel power MOSFET in an SMD-2 ceramic package, designed for space applications requiring high reliability. It features a drain-to-source breakdown voltage of -60 V, a continuous drain current of -56 A, and a typical on-resistance of 0.016 Ω at -12 V gate bias. The device is hardened to 100 krad(Si) total ionizing dose and exhibits Single Event Effect (SEE) resilience up to an LET of 80 MeV∕(mg/cm²). It is hermetically sealed, electrically isolated, lightweight, and rated for junction temperatures from -55 °C to +150 °C. The package has an ESD rating of Class 3A per MIL-STD-750, Method 1020, and a thermal resistance from junction to case of 0.5 °C/W.

Datasheet Summary
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The IRHNA597064D is a radiation-hardened, P-channel power MOSFET in an SMD-2 ceramic package, designed for space applications requiring high reliability. It features a drain-to-source breakdown voltage of -60 V, a continuous drain current of -56 A, and a typical on-resistance of 0.016 Ω at -12 V gate bias. The device is hardened to 100 krad(Si) total ionizing dose and exhibits Single Event Effect (SEE) resilience up to an LET of 80 MeV∕(mg/cm²). It is hermetically sealed, electrically isolated, lightweight, and rated for junction temperatures from -55 °C to +150 °C. The package has an ESD rating of Class 3A per MIL-STD-750, Method 1020, and a thermal resistance from junction to case of 0.5 °C/W.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHNA597064D - IRHNA597064D - Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHNA597064D
IRHNA597064D
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHNA597064D IRHNA597064D
Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Ease of paralleling Hermetically sealed Electrically isolated Ceramic Package Light weight Surface Mount ESD rating: Class 3A per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash sheet Similar Parts IRHNA597064 SMD-2, 100 krad(Si) TID, COTS IRHNA597064D SMD-2, 100 krad(Si) TID, COTS, On DBC carrier IRHNA597064SCS SMD-2, 100 krad(Si) TID, QIRL JANSR2N7524U2S SMD-2, 100 krad(Si) TID, QPL JANSR2N7524U2 SMD-2, 100 krad(Si) TID, QPL IRHNA593064 SMD-2, 300 krad(Si) TID, COTS JANSF2N7524U2 SMD-2, 300 krad(Si) TID, QPL

Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier

Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Low total gate charge
  • Simple drive requirements
  • Ease of paralleling
  • Hermetically sealed
  • Electrically isolated
  • Ceramic Package
  • Light weight
  • Surface Mount
  • ESD rating: Class 3A per MIL-STD-750, Method 1020

Potential Applications

  • DC-DC converter
  • Motor drives
  • Inrush current protection
  • Thermal management
  • Active ORing circuits
  • Redundant power distribution
  • Load switch
  • Battery charging
  • Battery management system

Slash sheet


Similar Parts

IRHNA597064

SMD-2, 100 krad(Si) TID, COTS

IRHNA597064D

SMD-2, 100 krad(Si) TID, COTS, On DBC carrier

IRHNA597064SCS

SMD-2, 100 krad(Si) TID, QIRL

JANSR2N7524U2S

SMD-2, 100 krad(Si) TID, QPL

JANSR2N7524U2

SMD-2, 100 krad(Si) TID, QPL

IRHNA593064

SMD-2, 300 krad(Si) TID, COTS

JANSF2N7524U2

SMD-2, 300 krad(Si) TID, QPL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRHNA597064D
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHNA597064D
Polarity P-Channel; P
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