The IRHNA597064D is a radiation-hardened, P-channel power MOSFET in an SMD-2 ceramic package, designed for space applications requiring high reliability. It features a drain-to-source breakdown voltage of -60 V, a continuous drain current of -56 A, and a typical on-resistance of 0.016 Ω at -12 V gate bias. The device is hardened to 100 krad(Si) total ionizing dose and exhibits Single Event Effect (SEE) resilience up to an LET of 80 MeV∕(mg/cm²). It is hermetically sealed, electrically isolated, lightweight, and rated for junction temperatures from -55 °C to +150 °C. The package has an ESD rating of Class 3A per MIL-STD-750, Method 1020, and a thermal resistance from junction to case of 0.5 °C/W.
Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier
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Potential Applications
Slash sheet
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRHNA597064D |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHNA597064D |
| Polarity | P-Channel; P |