55V Single N-Channel Power MOSFET in a I-Pak package
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
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N-Channel 55V 17A (Tc) 45W (Tc) Through Hole I-PAK
MOSFET N-CH 55V 17A I-PAK Product overview: IRLU024N from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLU024N can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1188658-IRLU024N
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 45W
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 75
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 17A
Rds On (Maximum) at Id, Vgs: 65mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 15nC at 5V
Gate Source Voltage (Maximum): ±16V
Input Capacitance (Ciss) (Maximum) at Vds: 480pF at 25V
MOSFET N-CH 55V 17A I-PAK
| Infineon Technologies AG | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors |
| Product Number | IRLU024N | IRLU024N-ND | 278-IRLU024N | 1188658-IRLU024N | IRLU024N |
| Product Name | N-Channel Power MOSFET | Single FETs, MOSFETs | 55V 17A MOSFET Transistor | FETs - Single - IRLU024N | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Si/SiC | ||||
| rDS(on) | 0.0650 ohms | ||||
| TJ | 175 C (347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-252 (DPAK); IPAK | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | SOT3 | TO-251-3 Short Leads, IPak, TO-251AA |