Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7389 JANSR2N7389

Description
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Low RDS(on) Prot on tolerant Low total gate charge Simple Drive Requirements Hermetically Sealed Ceramic package Light weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash Sheet Similar Parts IRHF9130 TO-205AF, 100 krad(Si) TID, COTS JANSR2N7389 TO-205AF, 100 krad(Si) TID, QPL IRHF93130 TO-205AF, 300 krad(Si) TID, COTS JANTXVF2N7389 TO-205AF, 300 krad(Si) TID, QPL JANSF2N7389 TO-205AF, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7389 - JANSR2N7389 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Low RDS(on) Prot on tolerant Low total gate charge Simple Drive Requirements Hermetically Sealed Ceramic package Light weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash Sheet Similar Parts IRHF9130 TO-205AF, 100 krad(Si) TID, COTS JANSR2N7389 TO-205AF, 100 krad(Si) TID, QPL IRHF93130 TO-205AF, 300 krad(Si) TID, COTS JANTXVF2N7389 TO-205AF, 300 krad(Si) TID, QPL JANSF2N7389 TO-205AF, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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JANSR2N7389 is a radiation-hardened, P-channel power MOSFET for space applications, housed in a TO-205AF (TO-39) ceramic package weighing 0.98 g. It has a drain-source breakdown voltage of -100 V, a maximum continuous drain current of -6.5 A at 25°C, and a static drain-source on-resistance of 0.30 Ω at -12 V gate bias and -4.1 A drain current. The device is hardened to 100 kRads(Si) total ionizing dose with verified performance under single event effects and is proton tolerant. It features a hermetically sealed package, low gate charge of 45 nC, and an ESD rating of Class 1B per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to +150°C, with a junction-to-case thermal resistance of 5.0 °C/W.

Datasheet Summary
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JANSR2N7389 is a radiation-hardened, P-channel power MOSFET for space applications, housed in a TO-205AF (TO-39) ceramic package weighing 0.98 g. It has a drain-source breakdown voltage of -100 V, a maximum continuous drain current of -6.5 A at 25°C, and a static drain-source on-resistance of 0.30 Ω at -12 V gate bias and -4.1 A drain current. The device is hardened to 100 kRads(Si) total ionizing dose with verified performance under single event effects and is proton tolerant. It features a hermetically sealed package, low gate charge of 45 nC, and an ESD rating of Class 1B per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to +150°C, with a junction-to-case thermal resistance of 5.0 °C/W.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7389 - JANSR2N7389 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7389
JANSR2N7389
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7389 JANSR2N7389
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Low RDS(on) Prot on tolerant Low total gate charge Simple Drive Requirements Hermetically Sealed Ceramic package Light weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash Sheet Similar Parts IRHF9130 TO-205AF, 100 krad(Si) TID, COTS JANSR2N7389 TO-205AF, 100 krad(Si) TID, QPL IRHF93130 TO-205AF, 300 krad(Si) TID, COTS JANTXVF2N7389 TO-205AF, 300 krad(Si) TID, QPL JANSF2N7389 TO-205AF, 300 krad(Si) TID, QPL

Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL

Features

  • Single Event Effect (SEE) Hardened
  • Low RDS(on)</li><li>Proton tolerant
  • Low total gate charge
  • Simple Drive Requirements
  • Hermetically Sealed
  • Ceramic package
  • Light weight
  • ESD Rating: Class 1B per MIL-STD-750, Method 1020

Potential Applications

  • DC-DC converter
  • Motor drives
  • Inrush current protection
  • Solid state power controller
  • Thermal management
  • Active ORing circuits
  • Redundant power distribution
  • Load switch
  • Battery charging
  • Battery management system

Slash Sheet


Similar Parts

IRHF9130

TO-205AF, 100 krad(Si) TID, COTS

JANSR2N7389

TO-205AF, 100 krad(Si) TID, QPL

IRHF93130

TO-205AF, 300 krad(Si) TID, COTS

JANTXVF2N7389

TO-205AF, 300 krad(Si) TID, QPL

JANSF2N7389

TO-205AF, 300 krad(Si) TID, QPL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number JANSR2N7389
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7389
Polarity P-Channel; P
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