The IRHMS597160 is a radiation-hardened, P-channel power MOSFET designed for space applications, featuring a low-ohmic TO-254AA package weighing 9.3 g. It is rated for a drain-source voltage of -100 V, continuous drain current of -45 A at 25°C, and a static drain-source on-resistance of 0.05 Ω. The device is hardened to 100 krad(Si) total ionizing dose with identical pre- and post-irradiation electrical characteristics. It supports repetitive avalanche energy up to 20.8 mJ and has a single event effect (SEE) safe operating area up to 80 MeV·cm²/mg. The package is hermetically sealed, features ceramic eyelets, and meets ESD Class 3A per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to +150°C.
Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, COTS
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Potential Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRHMS597160 |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHMS597160 |
| Polarity | P-Channel; P |
