ISC037N12NM6 is an N-channel MOSFET designed for high-frequency switching and synchronous rectification, with a drain-source voltage rating of 120 V and a maximum on-resistance of 3.7 mΩ. It is packaged in a PG-TDSON-8 FL case, measuring 5.35 mm × 6.42 mm × 1.20 mm, and rated for operation up to 175°C junction temperature. The device has a continuous drain current of 163 A, a total gate charge of 58 nC, and a reverse recovery charge of 256 nC under 1000 A/µs switching conditions. It meets RoHS and halogen-free standards per IEC 61249-2-21, is MSL 1 rated per J-STD-020, and is fully qualified for industrial applications per JEDEC standards.
OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package
This is a normal level 120 V MOSFET in SuperSO8 packaging with 3.7 mOhm on-resistance. ISC037N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
Summary of Features
Compared to OptiMOS™ 3, the technology features:
Benefits
Potential Applications
Designers who used this product also designed with
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISC037N12NM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC037N12NM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0037 ohms |
