Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC037N12NM6 ISC037N12NM6

OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package This is a normal level 120 V MOSFET in SuperSO8 packaging with 3.7 mOhm on-resistance. ISC037N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family. Summary of Features Compared to OptiMOS™ 3, the technology features: up to 58% better RDS(on) up to 66% better FOMg up to 90% better Qrr up to 35% better FOMoss Benefits Very low on-resistance Very low reverse recovery charge Excellent gate charge x RDS(on) High avalanche energy rating 175°C junction temperature rating Pb-free plating RoHS compliant Halogen-free MSL1 classified Potential Applications Power and Gardening Tools Adapters and Fast Chargers Solar Telecom Light electric vehicles Designers who used this product also designed with BTH50030-1LUA | Power PROFET™ + 12/24/48V | automotive smart high-side switch BSC016N06NS | N-Channel Power MOSFET BTH50030-1LUA | Power PROFET™ + 12/24/48V | automotive smart high-side switch BSC016N06NS | N-Channel Power MOSFET BTH50030-1LUA | Power PROFET™ + 12/24/48V | automotive smart high-side switch BSC016N06NS | N-Channel Power MOSFET