Radiation-hardened P-channel power MOSFET in an SMD-0.5 package, rated for -100V drain-to-source breakdown voltage, -11A continuous drain current, and 0.29Ω maximum on-state resistance. The device is hermetically sealed, supports a junction temperature range of -55°C to +150°C, and is qualified to JANS screening per MIL-PRF-19500 for space applications with a total ionizing dose tolerance of 100 krad(Si). It meets ESD classification Class 1B per MIL-STD-750, Method 1020.
Rad hard, -100V, -11A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL, Lead Attached
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRHNJ9130SCSA |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHNJ9130SCSA |
| Polarity | P-Channel; P |
