ISC0702NLS is an N-channel logic-level MOSFET designed for high-frequency switching in charger applications. It is packaged in PG-TDSON-8 with dimensions of 5.35 mm length, 6.10 mm width, and 1.20 mm height. The device has a drain-source breakdown voltage of 60 V, a maximum continuous drain current of 135 A, and a drain-source on-state resistance of 2.8 mΩ. It is 100% avalanche tested with a single-pulse avalanche energy rating of 58 mJ. The MOSFET is RoHS compliant and halogen-free according to IEC 61249-2-21, and qualified for standard-grade applications. Thermal resistance from junction to case is 1.2-1.5 °C/W, and junction-to-ambient is 50 °C/W on a 6 cm² PCB copper area.
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISC0702NLS |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0028 ohms |
