Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISCH42N04LM7 ISCH42N04LM7

Description
Unleash maximum power with the next best-in-class OptiMOS™ 7 40 V power MOSFET in a PQFN 5x6 ISCH42N04LM7 is the best-in-class 40 V power MOSFET in a PQFN 5x6 in the market. Whilst an improvement of up to 40% in RDS(on) compared to OptiMOS™ 6 40 V is achieved, it also makes a 50% PCB real estate area reduction possible because of the PQFN 5x6 when compared to the DirectFET™ (L) solution, making parallelization obsolete and further increasing power density while reducing the system cost. Summary of Features BiC 40 V power MOSFET in a PQFN 5x6 Outstanding RDS(on) Industry standard footprint Wide safe operating area Benefits Best fit in BMS applications Less energy loss/highest power density Ease of integration for seamless compatability Increased reliability and robustness Applications Battery management systems (BMS) Power conversion
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Description
Unleash maximum power with the next best-in-class OptiMOS™ 7 40 V power MOSFET in a PQFN 5x6 ISCH42N04LM7 is the best-in-class 40 V power MOSFET in a PQFN 5x6 in the market. Whilst an improvement of up to 40% in RDS(on) compared to OptiMOS™ 6 40 V is achieved, it also makes a 50% PCB real estate area reduction possible because of the PQFN 5x6 when compared to the DirectFET™ (L) solution, making parallelization obsolete and further increasing power density while reducing the system cost. Summary of Features BiC 40 V power MOSFET in a PQFN 5x6 Outstanding RDS(on) Industry standard footprint Wide safe operating area Benefits Best fit in BMS applications Less energy loss/highest power density Ease of integration for seamless compatability Increased reliability and robustness Applications Battery management systems (BMS) Power conversion
Request a Quote Datasheet

Suppliers

Company
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Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISCH42N04LM7 - ISCH42N04LM7 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISCH42N04LM7
ISCH42N04LM7
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISCH42N04LM7 ISCH42N04LM7
Unleash maximum power with the next best-in-class OptiMOS™ 7 40 V power MOSFET in a PQFN 5x6 ISCH42N04LM7 is the best-in-class 40 V power MOSFET in a PQFN 5x6 in the market. Whilst an improvement of up to 40% in RDS(on) compared to OptiMOS™ 6 40 V is achieved, it also makes a 50% PCB real estate area reduction possible because of the PQFN 5x6 when compared to the DirectFET™ (L) solution, making parallelization obsolete and further increasing power density while reducing the system cost. Summary of Features BiC 40 V power MOSFET in a PQFN 5x6 Outstanding RDS(on) Industry standard footprint Wide safe operating area Benefits Best fit in BMS applications Less energy loss/highest power density Ease of integration for seamless compatability Increased reliability and robustness Applications Battery management systems (BMS) Power conversion

Unleash maximum power with the next best-in-class OptiMOS™ 7 40 V power MOSFET in a PQFN 5x6

ISCH42N04LM7 is the best-in-class 40 V power MOSFET in a PQFN 5x6 in the market. Whilst an improvement of up to 40% in RDS(on) compared to OptiMOS™ 6 40 V is achieved, it also makes a 50% PCB real estate area reduction possible because of the PQFN 5x6 when compared to the DirectFET™ (L) solution, making parallelization obsolete and further increasing power density while reducing the system cost.


Summary of Features

  • BiC 40 V power MOSFET in a PQFN 5x6
  • Outstanding RDS(on)
  • Industry standard footprint
  • Wide safe operating area

Benefits

  • Best fit in BMS applications
  • Less energy loss/highest power density
  • Ease of integration for seamless compatability
  • Increased reliability and robustness

Applications

  • Battery management systems (BMS)
  • Power conversion
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number ISCH42N04LM7
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISCH42N04LM7
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 4.20E-4 ohms
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