The ISCH42N04LM7 is an N-channel MOSFET for power switching applications, packaged in a PG-TDSON-8 case with a thermal pad on the bottom. It has a maximum drain-source voltage of 40 V, a maximum continuous drain current of 541 A at 25°C, and a maximum on-resistance of 0.42 mΩ at V_GS = 10 V and T_C = 25°C. The device is 100% avalanche tested, with single-pulse avalanche energy rating of 899 mJ at I_D = 50 A. Thermal resistance from junction to case bottom is 0.64 °C/W. It is RoHS compliant and halogen-free per IEC61249-2-21, and fully qualified for industrial applications according to JEDEC standards.
Unleash maximum power with the next best-in-class OptiMOS™ 7 40 V power MOSFET in a PQFN 5x6
ISCH42N04LM7 is the best-in-class 40 V power MOSFET in a PQFN 5x6 in the market. Whilst an improvement of up to 40% in RDS(on) compared to OptiMOS™ 6 40 V is achieved, it also makes a 50% PCB real estate area reduction possible because of the PQFN 5x6 when compared to the DirectFET™ (L) solution, making parallelization obsolete and further increasing power density while reducing the system cost.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISCH42N04LM7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISCH42N04LM7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 4.20E-4 ohms |
