The JANTX2N6845 is a hermetically sealed, P-channel power MOSFET designed for high-reliability applications, including military and defense systems. It is packaged in a TO-205AF (TO-39) case and is rated for a drain-to-source breakdown voltage of -100V, continuous drain current of -4.0A at 25°C, and maximum power dissipation of 20W. The device features repetitive avalanche capability with an energy rating of 2.0 mJ and a peak diode recovery dv/dt of -5.0 V/ns. It meets MIL-PRF-19500/563 requirements and has an ESD rating of Class 1B per MIL-STD-750, Method 1020. The operating junction and storage temperature ranges are -55°C to +150°C. Thermal resistance from junction to case is 6.25°C/W.
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTX2N6845 with Hermetic Packaging
Benefits
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANTX2N6845 |
| Product Name | High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - JANTX2N6845 |
| Polarity | P-Channel; P |