Infineon Technologies AG N-Channel Power MOSFET IRL40S212

Description
40 V Single N-Channel HEXFET power MOSFET in a D²PAK package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 5 V gate drive voltage (called logic level) Softer body-diode compared to previous silicon generation Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered Applications Automotive battery management system (BMS)
  • N-Channel Power MOSFET - IRL40S212 - Infineon Technologies AG
    Infineon Technologies AG
  • Single FETs, MOSFETs - IRL40S212-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL40S212 - 875228-IRL40S212 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL40S212 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
40 V Single N-Channel HEXFET power MOSFET in a D²PAK package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 5 V gate drive voltage (called logic level) Softer body-diode compared to previous silicon generation Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered Applications Automotive battery management system (BMS)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IRL40S212 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRL40S212
N-Channel Power MOSFET IRL40S212
40 V Single N-Channel HEXFET power MOSFET in a D²PAK package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 5 V gate drive voltage (called logic level) Softer body-diode compared to previous silicon generation Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered Applications Automotive battery management system (BMS)

40 V Single N-Channel HEXFET power MOSFET in a D²PAK package


Benefits

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Optimized for 5 V gate drive voltage (called logic level)
  • Softer body-diode compared to previous silicon generation
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered

Applications

  • Automotive battery management system (BMS)
Supplier's Site Datasheet
Single FETs, MOSFETs - IRL40S212-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL40S212-ND
Single FETs, MOSFETs IRL40S212-ND
N-Channel 40V 195A (Tc) 231W (Tc) Surface Mount PG-TO263-3

N-Channel 40V 195A (Tc) 231W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL40S212 - 875228-IRL40S212 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL40S212
875228-IRL40S212
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL40S212 875228-IRL40S212
Manufacturer: Infineon Technologies Win Source Part Number: 875228-IRL40S212 Series: StrongIRFET™ Operating Temperature Range: -55°C ~ 175°C (TJ) Features: N-Channel 40 V 195A (Tc) 231W (Tc) Surface Mount D2PAK Package: Tube Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: Surface Mount Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: D2PAK ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 800 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IRL40S212CT, IRL40S212DKR-ND, IRL40S212CT-ND, IRL40S212TR-ND, IRL40S212TRINACTIVE, SP001568454, IRL40S212DKRINACTIVE , IRL40S212TR

Manufacturer: Infineon Technologies
Win Source Part Number: 875228-IRL40S212
Series: StrongIRFET™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 40 V 195A (Tc) 231W (Tc) Surface Mount D2PAK
Package: Tube
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: Surface Mount
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: D2PAK
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IRL40S212CT, IRL40S212DKR-ND, IRL40S212CT-ND, IRL40S212TR-ND, IRL40S212TRINACTIVE, SP001568454, IRL40S212DKRINACTIVE, IRL40S212TR

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRL40S212
MOSFET IRL40S212
MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl

MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL40S212 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL40S212
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL40S212
MOSFET N-CH 40V 195A D2PAK

MOSFET N-CH 40V 195A D2PAK

Supplier's Site

Technical Specifications

  Infineon Technologies AG DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRL40S212 IRL40S212-ND 875228-IRL40S212 IRL40S212 IRL40S212
Product Name N-Channel Power MOSFET Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL40S212 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N N-Channel N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0019 ohms
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