JANSF2N7546U3 is a radiation-hardened, P-channel power MOSFET in an SMD-0.5 ceramic surface mount package, rated for -200V drain-to-source voltage and -8.0A continuous drain current with a maximum RDS(on) of 505 mΩ and total gate charge of 45 nC. It is qualified to JANS screening flow per MIL-PRF-19500, with a total ionizing dose tolerance of 300 krad(Si) and single event effect hardening up to 80 MeV·cm²/mg. The device meets ESD classification 1C per MIL-STD-750, Method 1020, and is hermetically sealed for space applications.
Rad hard, -200V, -8.0A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL
Features
Potential Applications
Slash sheet
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANSF2N7546U3 |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSF2N7546U3 |
| Polarity | P-Channel; P |