ISA250300C04LMDS is a complementary N- and P-channel MOSFET in a PG-DSO-8 package, rated for 40 V drain-source voltage. The N-channel device has a maximum on-resistance of 32 mΩ at 10 V gate-source voltage and supports a continuous drain current of 7.9 A, while the P-channel device has a maximum on-resistance of 44 mΩ at -10 V gate-source voltage and handles -7.8 A continuous drain current. Both devices are avalanche-tested with a single-pulse energy rating of 17.2 mJ. The package measures 5.00 mm maximum by 6.20 mm maximum, with a lead pitch of 1.27 mm. The part is RoHS compliant and halogen-free according to IEC 61249-2-21, with an operating temperature range of -55 °C to 150 °C.
OptiMOS™ Dual N+P channel power MOSFET 40 V in SO-8 package
With the new OptiMOS™ Dual power MOSFET 40 V (ISA250300C04LMDS) in SO-8 package, Infineon offers a benchmark solution for best price performance products.
The N+P dual channel MOSFETs are a perfect solution for applications such as lawn mower robots, vaccum robots, drones and many other low power DCDC applications. Moreover, the Dual MOSFETs are an excellent choice for creating compact and straightforward design solutions.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISA250300C04LMDS |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISA250300C04LMDS |
| Polarity | N-Channel; N+P |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0250 to 0.0300 ohms |
