Infineon Technologies AG High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - JANTXV2N6800U JANTXV2N6800U

JANTXV2N6800U is a 400 V, N-channel power MOSFET in a hermetically sealed, leadless chip carrier (LCC-18) package, designed as a surface-mount replacement for the TO-39. It has a continuous drain current of 3.0 A at 25°C, a static drain-source on-resistance of 1.0 Ω at 10 V gate-source voltage, and a maximum power dissipation of 25 W. The device supports repetitive avalanche energy up to 2.5 mJ and peak diode recovery dv/dt of 8.4 V/ns. It meets MIL-PRF-19500/557 and has an ESD rating of Class 1C per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to 150°C, and thermal resistance from junction to case is 5.0 °C/W. The package is grounded to the source to reduce RF interference.