Infineon Technologies AG N-Channel Power MOSFET IRLS3036

Description
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Applications Fuel-cell control unit (FCCU) Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Logic level : Optimized for 10 V gate-drive voltage (called normal level), and capable of being driven at 4.5 V gate-drive voltage Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered
  • N-Channel Power MOSFET - IRLS3036 - Infineon Technologies AG
    Infineon Technologies AG
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Description
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Applications Fuel-cell control unit (FCCU) Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Logic level : Optimized for 10 V gate-drive voltage (called normal level), and capable of being driven at 4.5 V gate-drive voltage Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered
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Datasheet
Datasheet Summary
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60V N-channel HEXFET Power MOSFET in a D2-Pak (TO-263) package, optimized for logic-level drive at 4.5V gate voltage with a typical on-resistance of 1.9mΩ at 10V gate drive and 2.2mΩ at 4.5V gate drive. The device supports a continuous drain current of 195A limited by the package and 270A limited by silicon at 25°C. It has a junction-to-case thermal resistance of 0.40°C/W and is rated for operation from -55°C to 175°C. The MOSFET features a single pulse avalanche energy rating of 290mJ and meets the AEC-Q200 qualification standard. Lead-free and designed for high-efficiency switching applications such as synchronous rectification and DC motor drives.

Datasheet Summary
Powered by GS/AI

60V N-channel HEXFET Power MOSFET in a D2-Pak (TO-263) package, optimized for logic-level drive at 4.5V gate voltage with a typical on-resistance of 1.9mΩ at 10V gate drive and 2.2mΩ at 4.5V gate drive. The device supports a continuous drain current of 195A limited by the package and 270A limited by silicon at 25°C. It has a junction-to-case thermal resistance of 0.40°C/W and is rated for operation from -55°C to 175°C. The MOSFET features a single pulse avalanche energy rating of 290mJ and meets the AEC-Q200 qualification standard. Lead-free and designed for high-efficiency switching applications such as synchronous rectification and DC motor drives.

Suppliers

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N-Channel Power MOSFET - IRLS3036 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRLS3036
N-Channel Power MOSFET IRLS3036
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Applications Fuel-cell control unit (FCCU) Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Logic level : Optimized for 10 V gate-drive voltage (called normal level), and capable of being driven at 4.5 V gate-drive voltage Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


Applications

  • Fuel-cell control unit (FCCU)

Benefits

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Logic level : Optimized for 10 V gate-drive voltage (called normal level), and capable of being driven at 4.5 V gate-drive voltage
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRLS3036
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0024 ohms
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