Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - Quad rad hard power MOSFETs - IRHQ9110 IRHQ9110

IRHQ9110 is a 100V, quad P-channel radiation-hardened power MOSFET in a ceramic surface-mount LCC-28 package, weighing 0.89 g. It has a maximum continuous drain current of -2.3 A at 25°C and a typical on-state resistance of 1.1 Ω. The device is hardened to 100 kRads(Si) total ionizing dose with a gate threshold voltage range of -2.0 V to -4.0 V and zero gate voltage drain current of -25 µA. It is hermetically sealed, proton tolerant, and designed for space applications with verified Single Event Effect (SEE) immunity up to 100 V drain-to-source bias. Thermal resistance from junction to case is 10.4 °C/W.