JANTX2N6849 is a hermetically sealed, P-channel power MOSFET in a TO-205AF/TO-39 package, rated for -100V drain-source breakdown voltage and -6.5A continuous drain current. It has a maximum on-resistance of 0.30Ω, a gate charge of 34.8nC, and supports repetitive avalanche energy of 2.5mJ. The device meets JANS screening flow per MIL-PRF-19500 for space applications and is rated for operation from -55°C to +150°C. Its ESD rating is Class 1C per MIL-STD-750, Method 1020.
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTX2N6849 with Hermetic Packaging
Benefits
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANTX2N6849 |
| Product Name | High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - JANTX2N6849 |
| Polarity | P-Channel; P |
