JANSR2N7584T1 is a radiation-hardened, N-channel power MOSFET in a low-ohmic TO-254AA through-hole package, rated for 200V drain-to-source breakdown voltage and 45A continuous drain current, with a maximum on-state resistance of 29 mΩ and a total gate charge of 240 nC. It is hardened against single event effects up to 90 MeV·cm²/mg and qualified to a total ionizing dose of 100 krad (Si). The device is hermetically sealed, features ceramic eyelets, and meets ESD Class 3A per MIL-STD-750, Method 1020. It is designed for space applications including DC-DC converters, motor drives, and electric propulsion systems.
Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL
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Potential Applications
Slash sheet
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANSR2N7584T1 |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSR2N7584T1 |
| Polarity | N-Channel; N |