P-channel radiation-hardened MOSFET in a UBCN package, rated for -60V drain-to-source voltage and -0.53A continuous drain current, with a maximum on-state resistance of 1.40 Ω and a total gate charge of 3.6 nC, designed for space applications with 300 krad(Si) total ionizing dose tolerance and single event effect immunity, compliant with MIL-PRF-19500 and hermetically sealed.
Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBCN, 300 krad(Si) TID, QPL
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Potential Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANSF2N7626UBCN |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSF2N7626UBCN |
| Polarity | P-Channel; P |