Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSR2N7469U2 JANSR2N7469U2

Description
Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Ceramic Package Light weight Surface Mount ESD rating: Class 3B per MIL-STD-750, Method 1020 Potential Applications DC-DC converters Motor Drives Thermal management Slash sheet Similar Parts IRHNA57160 SMD-2, 100 krad(Si) TID, COTS IRHNA57160D SMD-2, 100 krad(Si) TID, COTS, On DBC carrier JANSR2N7469U2S SMD-2, 100 krad(Si) TID, QPL JANSR2N7469U2L SMD-2, 100 krad(Si) TID, QPL JANSR2N7469U2 SMD-2, 100 krad(Si) TID, QPL JANSF2N7469U2 SMD-2, 100 krad(Si) TID, QPL IRHNA53160 SMD-2, 300 krad(Si) TID, COTS JANSG2N7469U2 SMD-2, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSR2N7469U2 - JANSR2N7469U2 - Infineon Technologies AG
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Description
Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Ceramic Package Light weight Surface Mount ESD rating: Class 3B per MIL-STD-750, Method 1020 Potential Applications DC-DC converters Motor Drives Thermal management Slash sheet Similar Parts IRHNA57160 SMD-2, 100 krad(Si) TID, COTS IRHNA57160D SMD-2, 100 krad(Si) TID, COTS, On DBC carrier JANSR2N7469U2S SMD-2, 100 krad(Si) TID, QPL JANSR2N7469U2L SMD-2, 100 krad(Si) TID, QPL JANSR2N7469U2 SMD-2, 100 krad(Si) TID, QPL JANSF2N7469U2 SMD-2, 100 krad(Si) TID, QPL IRHNA53160 SMD-2, 300 krad(Si) TID, COTS JANSG2N7469U2 SMD-2, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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JANSR2N7469U2 is a radiation-hardened, N-channel power MOSFET in an SMD-2 ceramic package, designed for space applications. It has a drain-to-source breakdown voltage of 100V, a continuous drain current of 75A at 25°C, and a maximum on-state resistance of 12mΩ. The device features a total gate charge of 160nC and is hermetically sealed. It is qualified to JANS screening per MIL-PRF-19500 and rated for 100 krad(Si) total ionizing dose with single event effect hardening. Weight is 3.3g, and it meets ESD rating Class 3B per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to +150°C, with junction-to-case thermal resistance of 0.5°C/W.

Datasheet Summary
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JANSR2N7469U2 is a radiation-hardened, N-channel power MOSFET in an SMD-2 ceramic package, designed for space applications. It has a drain-to-source breakdown voltage of 100V, a continuous drain current of 75A at 25°C, and a maximum on-state resistance of 12mΩ. The device features a total gate charge of 160nC and is hermetically sealed. It is qualified to JANS screening per MIL-PRF-19500 and rated for 100 krad(Si) total ionizing dose with single event effect hardening. Weight is 3.3g, and it meets ESD rating Class 3B per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to +150°C, with junction-to-case thermal resistance of 0.5°C/W.

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High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSR2N7469U2 - JANSR2N7469U2 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSR2N7469U2
JANSR2N7469U2
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSR2N7469U2 JANSR2N7469U2
Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Ceramic Package Light weight Surface Mount ESD rating: Class 3B per MIL-STD-750, Method 1020 Potential Applications DC-DC converters Motor Drives Thermal management Slash sheet Similar Parts IRHNA57160 SMD-2, 100 krad(Si) TID, COTS IRHNA57160D SMD-2, 100 krad(Si) TID, COTS, On DBC carrier JANSR2N7469U2S SMD-2, 100 krad(Si) TID, QPL JANSR2N7469U2L SMD-2, 100 krad(Si) TID, QPL JANSR2N7469U2 SMD-2, 100 krad(Si) TID, QPL JANSF2N7469U2 SMD-2, 100 krad(Si) TID, QPL IRHNA53160 SMD-2, 300 krad(Si) TID, COTS JANSG2N7469U2 SMD-2, 300 krad(Si) TID, QPL

Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL

Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Low total gate charge
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic Package
  • Light weight
  • Surface Mount
  • ESD rating: Class 3B per MIL-STD-750, Method 1020

Potential Applications

  • DC-DC converters
  • Motor Drives
  • Thermal management

Slash sheet


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JANSR2N7469U2L

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Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number JANSR2N7469U2
Product Name High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSR2N7469U2
Polarity N-Channel; N
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