JANSR2N7469U2L is a radiation-hardened, N-channel power MOSFET in an SMD-2 ceramic package, designed for space applications. It is hermetically sealed, weighs 3.3 g, and has a drain-source breakdown voltage of 100V and a continuous drain current of 75A at 25⁰C. The maximum on-state resistance is 12mΩ at 12V gate bias, with a total gate charge not exceeding 160nC. The device is qualified to JANS screening per MIL-PRF-19500 and rated for 100 krad(Si) total ionizing dose. ESD tolerance is Class 3B per MIL-STD-750, Method 1020. The junction-to-case thermal resistance is 0.5⁰C/W.
Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL
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Potential Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANSR2N7469U2L |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSR2N7469U2L |
| Polarity | N-Channel; N |