IRHNS57064 is a 60V, N-channel radiation-hardened power MOSFET in a SupIR-SMD surface-mount ceramic package, weighing 3.3 grams, designed for space applications with up to 100 krad(Si) total ionizing dose tolerance and Single Event Effect (SEE) hardness up to 80 MeV·cm²/mg. It has a maximum steady drain current of 75A, a RDS(on) of 5.6 mΩ at 12V gate bias, and a total gate charge of 165 nC. The device is hermetically sealed, meets ESD Class 3B per MIL-STD-750 Method 1020, and operates from -55°C to +150°C junction temperature.
Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS
Features
Potential Applications
Slash sheet
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRHNS57064 |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS57064 |
| Polarity | N-Channel; N |