Manufacturer: Infineon Technologies
Win Source Part Number: 1188593-IRLML6402TR
Packaging: Cut Tape (CT)
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: Micro3/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 1.3W
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 3.7A
Rds On (Maximum) at Id, Vgs: 65mOhm at 3.7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 12nC at 5V
Gate Source Voltage (Maximum): ±12V
Input Capacitance (Ciss) (Maximum) at Vds: 633pF at 10V
MOSFET P-CH 20V 3.7A SOT-23 Product overview: IRLML6402TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.7A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.7A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLML6402TR can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1188593-IRLML6402TR | 278-IRLML6402TR |
| Product Name | Electronic Surplus - IRLML6402TR | 20V 3.7A SOT-23 MOSFET Transistor |
| Polarity | P-Channel; P-Channel | |
| V(BR)DSS | 20 volts | |
| QG | 12 nC | |
| PD | 1300 milliwatts |