MOSFET N-CH 55V 104A D2PAK Product overview: IRL2505STRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 104A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 104A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL2505STRLPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 55V 104A D2PAK
Manufacturer: Infineon Technologies
Win Source Part Number: 138325-IRL2505STRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 104A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 130nC @ 5V
Max Input Capacitance: 5000pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 8 mOhm @ 54A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
N-Channel 55V 104A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
N-Channel 55V 104A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
N-Channel 55V 104A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
MOSFET N-CH 55V 104A D2PAK
Single N-Channel 55 V 0.008 Ohm 130 nC HEXFET® Power Mosfet - D2PAK
MOSFET MOSFT 55V 104A 8mOhm 86.7nC Log Lvl
MOSFET, N-CH, 55V, 104A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRL2505STRLPBF | IRL2505STRLPBF | 138325-IRL2505STRLPBF | IRL2505STRLPBFDKR-ND | IRL2505STRLPBF | 376-IRL2505STRLPBF | IRL2505STRLPBF | 34AC1798 |
| Product Name | 55V 104A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL2505STRLPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single N-Channel 55 V 0.008 Ohm 130 nC HEXFET® Power Mosfet - D2PAK | MOSFET | Mosfet, N-Ch, 55V, 104A, To-263Ab; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| PD | 200 milliwatts | 3800 milliwatts | 3800 to 200000 milliwatts | 200000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | Tape & Reel (TR) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 |
