Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7503U8 JANSF2N7503U8

Description
Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Light weight Surface mount Complimentary P-channel available ΓÇô IRHNM597110, IRHNMC597110 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHNM57110 SMD-0.5, 100 krad(Si) TID, COTS IRHNM57110SCS SMD-0.5, 100 krad(Si) TID, QIRL JANSR2N7503U8 SMD-0.5, 100 krad(Si) TID, QPL IRHNM53110 SMD-0.5, 300 krad(Si) TID, COTS JANSF2N7503U8 SMD-0.5, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7503U8 - JANSF2N7503U8 - Infineon Technologies AG
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Description
Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Light weight Surface mount Complimentary P-channel available ΓÇô IRHNM597110, IRHNMC597110 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHNM57110 SMD-0.5, 100 krad(Si) TID, COTS IRHNM57110SCS SMD-0.5, 100 krad(Si) TID, QIRL JANSR2N7503U8 SMD-0.5, 100 krad(Si) TID, QPL IRHNM53110 SMD-0.5, 300 krad(Si) TID, COTS JANSF2N7503U8 SMD-0.5, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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JANSF2N7503U8 is a radiation-hardened, N-channel power MOSFET in an SMD-0.2 surface-mount ceramic package, designed for space applications. It has a drain-to-source breakdown voltage of 100 V, a continuous drain current of 6.9 A at 25°C, a maximum on-state resistance of 0.22 Ω, and a total gate charge of 15 nC. The device is hermetically sealed, with a total ionizing dose tolerance of 300 krad(Si) and single event effect hardening up to an LET of 80 MeV·cm²/mg. It meets MIL-PRF-19500 qualification and has an ESD rating of Class 1A per MIL-STD-750, Method 1020. The thermal resistance from junction to case is 5.4 °C/W. The package weight is 0.25 g typical.

Datasheet Summary
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JANSF2N7503U8 is a radiation-hardened, N-channel power MOSFET in an SMD-0.2 surface-mount ceramic package, designed for space applications. It has a drain-to-source breakdown voltage of 100 V, a continuous drain current of 6.9 A at 25°C, a maximum on-state resistance of 0.22 Ω, and a total gate charge of 15 nC. The device is hermetically sealed, with a total ionizing dose tolerance of 300 krad(Si) and single event effect hardening up to an LET of 80 MeV·cm²/mg. It meets MIL-PRF-19500 qualification and has an ESD rating of Class 1A per MIL-STD-750, Method 1020. The thermal resistance from junction to case is 5.4 °C/W. The package weight is 0.25 g typical.

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High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7503U8 - JANSF2N7503U8 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7503U8
JANSF2N7503U8
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7503U8 JANSF2N7503U8
Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Light weight Surface mount Complimentary P-channel available ΓÇô IRHNM597110, IRHNMC597110 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHNM57110 SMD-0.5, 100 krad(Si) TID, COTS IRHNM57110SCS SMD-0.5, 100 krad(Si) TID, QIRL JANSR2N7503U8 SMD-0.5, 100 krad(Si) TID, QPL IRHNM53110 SMD-0.5, 300 krad(Si) TID, COTS JANSF2N7503U8 SMD-0.5, 300 krad(Si) TID, QPL

Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 300 krad(Si) TID, QPL

Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Low total gate charge
  • Simple drive requirements
  • Hermetically sealed
  • Light weight
  • Surface mount
  • Complimentary P-channel available ΓÇô IRHNM597110, IRHNMC597110

Potential Applications

  • Isolated DC-DC converters
  • Motor drives
  • Electric propulsion
  • Thermal management

Slash sheet


Similar Parts

IRHNM57110

SMD-0.5, 100 krad(Si) TID, COTS

IRHNM57110SCS

SMD-0.5, 100 krad(Si) TID, QIRL

JANSR2N7503U8

SMD-0.5, 100 krad(Si) TID, QPL

IRHNM53110

SMD-0.5, 300 krad(Si) TID, COTS

JANSF2N7503U8

SMD-0.5, 300 krad(Si) TID, QPL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number JANSF2N7503U8
Product Name High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7503U8
Polarity N-Channel; N
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