IRHYS9A3234CMSCS is a radiation-hardened, N-channel power MOSFET for space applications, housed in a Low-Ohmic TO-257AA package. It has a drain-to-source breakdown voltage of 250V, a continuous drain current of 17A at 25°C, and a maximum on-state resistance of 110 mΩ at VGS = 12V and ID = 10.5A. The device features a total gate charge of 34 nC and is hardened against single event effects up to 88.6 MeV·cm²/mg. It is qualified to MIL-PRF-19500 with a total ionizing dose tolerance of 300 krad(Si) and is hermetically sealed with electrically isolated ceramic eyelets. The ESD rating is Class 2 per MIL-STD-750, Method 1020.
Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, QIRL
NOTE: this part is superseded by JANSR2N7649T3
Features
Potential Applications
MIL-PRF-19500/755
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRHYS9A3234CMSCS |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHYS9A3234CMSCS |
| Polarity | N-Channel; N |