Infineon Technologies AG P-Channel Power MOSFET IRLML9301

Description
-30V Single P-Channel StrongIRFET™ Power MOSFET in a SOT-23 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Industry standard surface-mount power package Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Benefits Standard pinout allows for drop in replacement Industry standard qualification level High performance in low frequency applications Increased power density Potential Applications Battery protection SMPS DC switch Load switch Applications Light electric vehicles (LEV) Power transmission and distribution Programmable logic controller (PLC) Servo motor drive and control Designers who used this product also designed with BSS123N | Small signal/small power MOSFET BSS806N | Small signal/small power MOSFET ISZ034N06LM5 | N-Channel Power MOSFET BSC014N06NS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET BSZ099N06LS5 | N-Channel Power MOSFET IDM02G120C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes CY8C4127AZI-S455 | PSOC™ 4 Arm® Cortex®-M0/M0+ ISC027N10NM6 | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET CY15V104QSN-108SXIT | EXCELON™ F-RAM CY8C4025AZI-S413 | PSOC™ 4 Arm® Cortex®-M0/M0+ BAS70-04S | Schottky Diodes FF200R12KE4 | IGBT modules FF450R12KE4 | IGBT modules BSC061N08NS5 | N-Channel Power MOSFET IKZA50N65SS5 | IGBT discretes BSS123N | Small signal/small power MOSFET BSS806N | Small signal/small power MOSFET ISZ034N06LM5 | N-Channel Power MOSFET BSC014N06NS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET BSZ099N06LS5 | N-Channel Power MOSFET IDM02G120C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes 1 2 3 4 5
  • P-Channel Power MOSFET - IRLML9301 - Infineon Technologies AG
    Infineon Technologies AG
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Description
-30V Single P-Channel StrongIRFET™ Power MOSFET in a SOT-23 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Industry standard surface-mount power package Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Benefits Standard pinout allows for drop in replacement Industry standard qualification level High performance in low frequency applications Increased power density Potential Applications Battery protection SMPS DC switch Load switch Applications Light electric vehicles (LEV) Power transmission and distribution Programmable logic controller (PLC) Servo motor drive and control Designers who used this product also designed with BSS123N | Small signal/small power MOSFET BSS806N | Small signal/small power MOSFET ISZ034N06LM5 | N-Channel Power MOSFET BSC014N06NS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET BSZ099N06LS5 | N-Channel Power MOSFET IDM02G120C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes CY8C4127AZI-S455 | PSOC™ 4 Arm® Cortex®-M0/M0+ ISC027N10NM6 | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET CY15V104QSN-108SXIT | EXCELON™ F-RAM CY8C4025AZI-S413 | PSOC™ 4 Arm® Cortex®-M0/M0+ BAS70-04S | Schottky Diodes FF200R12KE4 | IGBT modules FF450R12KE4 | IGBT modules BSC061N08NS5 | N-Channel Power MOSFET IKZA50N65SS5 | IGBT discretes BSS123N | Small signal/small power MOSFET BSS806N | Small signal/small power MOSFET ISZ034N06LM5 | N-Channel Power MOSFET BSC014N06NS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET BSZ099N06LS5 | N-Channel Power MOSFET IDM02G120C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes 1 2 3 4 5
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Datasheet
Datasheet Summary
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The IRLML9301 is a P-channel MOSFET designed for low-frequency power switching applications. It is packaged in a Micro3 (SOT-23) case with dimensions conforming to JEDEC TO-236AB. The device has a drain-source voltage rating of -30 V and a continuous drain current of -3.6 A at 25°C, with a maximum on-resistance of 64 mΩ at -10 V gate-source voltage and 103 mΩ at -4.5 V. It supports a pulsed drain current of -15 A and has a maximum power dissipation of 1.3 W at 25°C. Thermal resistance junction-to-ambient is 100 °C/W. The MOSFET is RoHS compliant, meets MSL1 moisture sensitivity level, and is qualified to JEDEC JESD47F consumer standards.

Datasheet Summary
Powered by GS/AI

The IRLML9301 is a P-channel MOSFET designed for low-frequency power switching applications. It is packaged in a Micro3 (SOT-23) case with dimensions conforming to JEDEC TO-236AB. The device has a drain-source voltage rating of -30 V and a continuous drain current of -3.6 A at 25°C, with a maximum on-resistance of 64 mΩ at -10 V gate-source voltage and 103 mΩ at -4.5 V. It supports a pulsed drain current of -15 A and has a maximum power dissipation of 1.3 W at 25°C. Thermal resistance junction-to-ambient is 100 °C/W. The MOSFET is RoHS compliant, meets MSL1 moisture sensitivity level, and is qualified to JEDEC JESD47F consumer standards.

Suppliers

Company
Product
Description
Supplier Links
P-Channel Power MOSFET - IRLML9301 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
P-Channel Power MOSFET
IRLML9301
P-Channel Power MOSFET IRLML9301
-30V Single P-Channel StrongIRFET™ Power MOSFET in a SOT-23 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Industry standard surface-mount power package Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Benefits Standard pinout allows for drop in replacement Industry standard qualification level High performance in low frequency applications Increased power density Potential Applications Battery protection SMPS DC switch Load switch Applications Light electric vehicles (LEV) Power transmission and distribution Programmable logic controller (PLC) Servo motor drive and control Designers who used this product also designed with BSS123N | Small signal/small power MOSFET BSS806N | Small signal/small power MOSFET ISZ034N06LM5 | N-Channel Power MOSFET BSC014N06NS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET BSZ099N06LS5 | N-Channel Power MOSFET IDM02G120C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes CY8C4127AZI-S455 | PSOC™ 4 Arm® Cortex®-M0/M0+ ISC027N10NM6 | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET CY15V104QSN-108SXIT | EXCELON™ F-RAM CY8C4025AZI-S413 | PSOC™ 4 Arm® Cortex®-M0/M0+ BAS70-04S | Schottky Diodes FF200R12KE4 | IGBT modules FF450R12KE4 | IGBT modules BSC061N08NS5 | N-Channel Power MOSFET IKZA50N65SS5 | IGBT discretes BSS123N | Small signal/small power MOSFET BSS806N | Small signal/small power MOSFET ISZ034N06LM5 | N-Channel Power MOSFET BSC014N06NS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET BSZ099N06LS5 | N-Channel Power MOSFET IDM02G120C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes 1 2 3 4 5

-30V Single P-Channel StrongIRFET™ Power MOSFET in a SOT-23 package

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.


Summary of Features

  • Industry standard surface-mount power package
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100 kHz
  • Softer body-diode compared to previous silicon generation

Benefits

  • Standard pinout allows for drop in replacement
  • Industry standard qualification level
  • High performance in low frequency applications
  • Increased power density

Potential Applications

  • Battery protection
  • SMPS
  • DC switch
  • Load switch

Applications

  • Light electric vehicles (LEV)
  • Power transmission and distribution
  • Programmable logic controller (PLC)
  • Servo motor drive and control

Designers who used this product also designed with


  • BSS123N |
    Small signal/small power MOSFET
  • BSS806N |
    Small signal/small power MOSFET
  • ISZ034N06LM5 |
    N-Channel Power MOSFET
  • BSC014N06NS |
    N-Channel Power MOSFET
  • BSS138N |
    Small signal/small power MOSFET
  • BSZ099N06LS5 |
    N-Channel Power MOSFET
  • IDM02G120C5 |
    CoolSiC™ Schottky Diodes
  • IMBG120R234M2H |
    Silicon Carbide MOSFET Discretes
  • CY8C4127AZI-S455 |
    PSOC™ 4 Arm® Cortex®-M0/M0+
  • ISC027N10NM6 |
    N-Channel Power MOSFET
  • BSD235N |
    Small signal/small power MOSFET
  • CY15V104QSN-108SXIT |
    EXCELON™ F-RAM
  • CY8C4025AZI-S413 |
    PSOC™ 4 Arm® Cortex®-M0/M0+
  • BAS70-04S |
    Schottky Diodes
  • FF200R12KE4 |
    IGBT modules
  • FF450R12KE4 |
    IGBT modules
  • BSC061N08NS5 |
    N-Channel Power MOSFET
  • IKZA50N65SS5 |
    IGBT discretes
  • BSS123N |
    Small signal/small power MOSFET
  • BSS806N |
    Small signal/small power MOSFET
  • ISZ034N06LM5 |
    N-Channel Power MOSFET
  • BSC014N06NS |
    N-Channel Power MOSFET
  • BSS138N |
    Small signal/small power MOSFET
  • BSZ099N06LS5 |
    N-Channel Power MOSFET
  • IDM02G120C5 |
    CoolSiC™ Schottky Diodes
  • IMBG120R234M2H |
    Silicon Carbide MOSFET Discretes

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRLML9301
Product Name P-Channel Power MOSFET
Polarity P-Channel; P
Transistor Technology / Material Si/SiC
rDS(on) 0.0640 ohms
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