Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHMS597160SCSA IRHMS597160SCSA

Description
Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL, Lead form down Features Single event effect (SEE) hardened Identical pre- and post-electrical test conditions Repetitive avalanche ratings Dynamic dv/dt ratings Simple drive requirements Hermetically sealed Ceramic eyelets Electrically isolated Light weight High electrical conductive package ESD Rating: Class 3A per MIL-STD-750, Method 1020 Potential Applications DC-DC converters Protection circuits Motor drives Slash sheet Similar Parts IRHMS597160 TO-254AA Low Ohmic, 100 krad(Si) TID, COTS IRHMS597160A TO-254AA Low Ohmic, 100 krad(Si) TID, COTS, Lead form down IRHMS597160SCSA TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL, Lead form down JANSR2N7550T1 TO-254AA Low Ohmic, 100 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHMS597160SCSA - IRHMS597160SCSA - Infineon Technologies AG
    Infineon Technologies AG
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Description
Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL, Lead form down Features Single event effect (SEE) hardened Identical pre- and post-electrical test conditions Repetitive avalanche ratings Dynamic dv/dt ratings Simple drive requirements Hermetically sealed Ceramic eyelets Electrically isolated Light weight High electrical conductive package ESD Rating: Class 3A per MIL-STD-750, Method 1020 Potential Applications DC-DC converters Protection circuits Motor drives Slash sheet Similar Parts IRHMS597160 TO-254AA Low Ohmic, 100 krad(Si) TID, COTS IRHMS597160A TO-254AA Low Ohmic, 100 krad(Si) TID, COTS, Lead form down IRHMS597160SCSA TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL, Lead form down JANSR2N7550T1 TO-254AA Low Ohmic, 100 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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The IRHMS597160SCSA is a radiation-hardened, P-channel MOSFET for space applications, available in a Low-Ohmic TO-254AA package measuring 20.32 mm long with a weight of 9.3 g. It has a drain-source breakdown voltage of -100 V, a maximum continuous drain current of -45 A at 25°C, and an on-resistance of 0.05 Ω at -12 V gate bias. The device is rated for 100 krad(Si) total ionizing dose and retains performance up to an LET of 80 MeV·cm²/mg for single event effects. It features hermetic sealing, ceramic eyelets, and an ESD rating of Class 3A per MIL-STD-750, Method 1020. Thermal resistance is 0.60 °C/W junction-to-case and 0.21 °C/W case-to-sink. The part meets MIL-PRF-19500/713 and is qualified under QPL standards.

Datasheet Summary
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The IRHMS597160SCSA is a radiation-hardened, P-channel MOSFET for space applications, available in a Low-Ohmic TO-254AA package measuring 20.32 mm long with a weight of 9.3 g. It has a drain-source breakdown voltage of -100 V, a maximum continuous drain current of -45 A at 25°C, and an on-resistance of 0.05 Ω at -12 V gate bias. The device is rated for 100 krad(Si) total ionizing dose and retains performance up to an LET of 80 MeV·cm²/mg for single event effects. It features hermetic sealing, ceramic eyelets, and an ESD rating of Class 3A per MIL-STD-750, Method 1020. Thermal resistance is 0.60 °C/W junction-to-case and 0.21 °C/W case-to-sink. The part meets MIL-PRF-19500/713 and is qualified under QPL standards.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHMS597160SCSA - IRHMS597160SCSA - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHMS597160SCSA
IRHMS597160SCSA
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHMS597160SCSA IRHMS597160SCSA
Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL, Lead form down Features Single event effect (SEE) hardened Identical pre- and post-electrical test conditions Repetitive avalanche ratings Dynamic dv/dt ratings Simple drive requirements Hermetically sealed Ceramic eyelets Electrically isolated Light weight High electrical conductive package ESD Rating: Class 3A per MIL-STD-750, Method 1020 Potential Applications DC-DC converters Protection circuits Motor drives Slash sheet Similar Parts IRHMS597160 TO-254AA Low Ohmic, 100 krad(Si) TID, COTS IRHMS597160A TO-254AA Low Ohmic, 100 krad(Si) TID, COTS, Lead form down IRHMS597160SCSA TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL, Lead form down JANSR2N7550T1 TO-254AA Low Ohmic, 100 krad(Si) TID, QPL

Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL, Lead form down

Features

  • Single event effect (SEE) hardened
  • Identical pre- and post-electrical test conditions
  • Repetitive avalanche ratings
  • Dynamic dv/dt ratings
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic eyelets
  • Electrically isolated
  • Light weight
  • High electrical conductive package
  • ESD Rating: Class 3A per MIL-STD-750, Method 1020

Potential Applications

  • DC-DC converters
  • Protection circuits
  • Motor drives

Slash sheet


Similar Parts

IRHMS597160

TO-254AA Low Ohmic, 100 krad(Si) TID, COTS

IRHMS597160A

TO-254AA Low Ohmic, 100 krad(Si) TID, COTS, Lead form down

IRHMS597160SCSA

TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL, Lead form down

JANSR2N7550T1

TO-254AA Low Ohmic, 100 krad(Si) TID, QPL

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Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRHMS597160SCSA
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHMS597160SCSA
Polarity P-Channel; P
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