Infineon Technologies AG P-Channel Power MOSFET IRLML6402

-20V Single P-Channel Power MOSFET in a Micro 3 package

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Summary of Features

• Planar cell structure for wide SOA
• Optimized for broadest availability from distribution partners
• Product qualification according to JEDEC standard
• Silicon optimized for applications switching below <100kHz
• Industry standard surface-mount package

Benefits

• Increased ruggedness
• Wide availability from distribution partners
• Industry standard qualification level
• High performance in low frequency applications
• Standard pinout allows for drop in replacement

Potential Applications

• DC Switches
• Load Switch

Applications

• Digital input/output (I/O) modules
• Integrated and discrete solutions for Personal Care products
• Servo motor drive and control
• Smart buildings

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Manufacturer: Infineon Technologies
Win Source Part Number: 095282-IRLML6402
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro3/SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.7A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 633pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.7A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance