The IRLHS6276 is a 20V dual N-channel power MOSFET in a 2mm x 2mm PQFN package designed for low conduction losses and high power density. It has a maximum on-resistance of 45 mΩ at V<sub>GS</sub> = 4.5V and 62 mΩ at V<sub>GS</sub> = 2.5V, with a continuous drain current of 3.4A at T<sub>A</sub> = 25°C and 9.6A at T<sub>C</sub> = 25°C. The device supports a gate-to-source voltage of ±12V and operates from -55°C to +150°C. It features a junction-to-case thermal resistance of 19°C/W (bottom) and meets RoHS standards, with MSL1 moisture sensitivity level per JEDEC J-STD-020D. The package has an industry-standard pinout for multi-vendor compatibility and is compatible with surface mount assembly techniques.
20V Dual N-Channel StrongIRFET™ Power MOSFET in a PQFN 2x2 package
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRLHS6276 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N+N ; N+N |
