JANSR2N7626UB is a radiation-hardened, P-channel power MOSFET in a UB surface-mount package, designed for space and high-reliability applications. It features a drain-to-source breakdown voltage of -60 V, a continuous drain current of -0.53 A at 25°C, and a maximum on-state resistance of 1.4 Ω at V_GS = -4.5 V. The device has a total gate charge of 3.6 nC and is hardened against single event effects and total ionizing dose up to 100 krad(Si). It is hermetically sealed, complies with MIL-PRF-19500, and meets ESD Class 0B per MIL-STD-750, Method 1020. The operating junction temperature ranges from -55°C to +150°C.
Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 100 krad(Si) TID, QPL
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Potential Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANSR2N7626UB |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSR2N7626UB |
| Polarity | P-Channel; P |