Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHYS9A3234CM IRHYS9A3234CM

Description
Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Fast switching Simple drive requirements Hermetically sealed Ceramic eyelets Electrically isolated ESD rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Slash sheet Similar Parts IRHYS9A7234CM TO-257AA Low Ohmic, 100 krad(Si) TID, COTS IRHYB9A7234CM TO-257AA Low Ohmic, 100 krad(Si) TID, COTS IRHYS9A7234CMSCS TO-257AA Low Ohmic, 100 krad(Si) TID, QIRL JANSR2N7649T3 TO-257AA Low Ohmic, 100 krad(Si) TID, QPL JANSR2N7649D5 TO-257AA Low Ohmic, 100 krad(Si) TID, QPL IRHYS9A3234CM TO-257AA Low Ohmic, 300 krad(Si) TID, COTS IRHYB9A3234CM TO-257AA Low Ohmic, 300 krad(Si) TID, COTS IRHYS9A3234CMSCS TO-257AA Low Ohmic, 300 krad(Si) TID, QIRL JANSF2N7649T3 TO-257AA Low Ohmic, 300 krad(Si) TID, QPL JANSF2N7649D5 TO-257AA Low Ohmic, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHYS9A3234CM - IRHYS9A3234CM - Infineon Technologies AG
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Description
Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Fast switching Simple drive requirements Hermetically sealed Ceramic eyelets Electrically isolated ESD rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Slash sheet Similar Parts IRHYS9A7234CM TO-257AA Low Ohmic, 100 krad(Si) TID, COTS IRHYB9A7234CM TO-257AA Low Ohmic, 100 krad(Si) TID, COTS IRHYS9A7234CMSCS TO-257AA Low Ohmic, 100 krad(Si) TID, QIRL JANSR2N7649T3 TO-257AA Low Ohmic, 100 krad(Si) TID, QPL JANSR2N7649D5 TO-257AA Low Ohmic, 100 krad(Si) TID, QPL IRHYS9A3234CM TO-257AA Low Ohmic, 300 krad(Si) TID, COTS IRHYB9A3234CM TO-257AA Low Ohmic, 300 krad(Si) TID, COTS IRHYS9A3234CMSCS TO-257AA Low Ohmic, 300 krad(Si) TID, QIRL JANSF2N7649T3 TO-257AA Low Ohmic, 300 krad(Si) TID, QPL JANSF2N7649D5 TO-257AA Low Ohmic, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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IRHYS9A3234CM is a radiation-hardened, N-channel power MOSFET in a Low-Ohmic TO-257AA package, designed for space applications with a 300 krad(Si) total ionizing dose tolerance. It has a drain-to-source breakdown voltage of 250 V, a continuous drain current of 17 A at 25 °C, and a maximum on-state resistance of 110 mΩ. The device features a total gate charge of 34 nC, hermetic sealing, ceramic eyelets, and an electrically isolated case. It is qualified under MIL-PRF-19500 and has single event effect hardness up to 88.6 MeV·cm²/mg, with an ESD rating of Class 2 per MIL-STD-750, Method 1020.

Datasheet Summary
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IRHYS9A3234CM is a radiation-hardened, N-channel power MOSFET in a Low-Ohmic TO-257AA package, designed for space applications with a 300 krad(Si) total ionizing dose tolerance. It has a drain-to-source breakdown voltage of 250 V, a continuous drain current of 17 A at 25 °C, and a maximum on-state resistance of 110 mΩ. The device features a total gate charge of 34 nC, hermetic sealing, ceramic eyelets, and an electrically isolated case. It is qualified under MIL-PRF-19500 and has single event effect hardness up to 88.6 MeV·cm²/mg, with an ESD rating of Class 2 per MIL-STD-750, Method 1020.

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High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHYS9A3234CM - IRHYS9A3234CM - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHYS9A3234CM
IRHYS9A3234CM
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHYS9A3234CM IRHYS9A3234CM
Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Fast switching Simple drive requirements Hermetically sealed Ceramic eyelets Electrically isolated ESD rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Slash sheet Similar Parts IRHYS9A7234CM TO-257AA Low Ohmic, 100 krad(Si) TID, COTS IRHYB9A7234CM TO-257AA Low Ohmic, 100 krad(Si) TID, COTS IRHYS9A7234CMSCS TO-257AA Low Ohmic, 100 krad(Si) TID, QIRL JANSR2N7649T3 TO-257AA Low Ohmic, 100 krad(Si) TID, QPL JANSR2N7649D5 TO-257AA Low Ohmic, 100 krad(Si) TID, QPL IRHYS9A3234CM TO-257AA Low Ohmic, 300 krad(Si) TID, COTS IRHYB9A3234CM TO-257AA Low Ohmic, 300 krad(Si) TID, COTS IRHYS9A3234CMSCS TO-257AA Low Ohmic, 300 krad(Si) TID, QIRL JANSF2N7649T3 TO-257AA Low Ohmic, 300 krad(Si) TID, QPL JANSF2N7649D5 TO-257AA Low Ohmic, 300 krad(Si) TID, QPL

Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, COTS

Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Low total gate charge
  • Fast switching
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic eyelets
  • Electrically isolated
  • ESD rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

  • Isolated DC-DC converters
  • Motor drives
  • Electric propulsion

Slash sheet


Similar Parts

IRHYS9A7234CM

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IRHYS9A7234CMSCS TO-257AA Low Ohmic, 100 krad(Si) TID, QIRL

JANSR2N7649T3

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JANSR2N7649D5

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IRHYB9A3234CM

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Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRHYS9A3234CM
Product Name High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHYS9A3234CM
Polarity N-Channel; N
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